IRF7752PBF Datasheet, PDF (2/8 Pages) International Rectifier – Ultra Low On-Resistance

IRF7752PbF
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)DSS Drain-to-Source Breakdown Voltage
30 ––– ––– V V_GS = 0V, I_D = -250µA
∆V_(BR)DSS/∆T_J Breakdown Voltage Temp. Coefficient
R_DS(on)
Static Drain-to-Source On-Resistance
––– 0.030 –––
––– ––– 0.030
––– ––– 0.036
V/°C
Ω
Reference to 25°C, I_D = 1mA
V_GS = 10V, I_D = 4.6A ‚
V_GS = 4.5V, I_D = 3.9A ‚
V_GS(th)
g_fs
Gate Threshold Voltage
Forward Transconductance
0.60 ––– 2.0
12 ––– –––
V V_DS = V_GS, I_D = 250µA
S V_DS = 10V, I_D = 4.6A
I_DSS
Drain-to-Source Leakage Current
––– ––– 20
––– ––– 100
µA
V_DS = 24V, V_GS = 0V
V_DS = 24V, V_GS = 0V, T_J = 125°C
I_GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– -200 _nA V_GS = -12V
––– ––– 200
V_GS = 12V
Q_g
Q_gs
Q_gd
t_d(on)
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
––– 9.0 –––
––– 2.5 –––
––– 2.6 –––
––– 7.2 –––
I_D = 4.6A
nC V_DS = 24V
V_GS = 4.5V‚
V_DD = 15V
t_r
t_d(off)
t_f
Rise Time
Turn-Off Delay Time
Fall Time
––– 9.1 ––– _ns I_D = 1.0A
––– 25 –––
R_G = 6.0Ω
––– 11 –––
V_GS = 10V‚
C_iss
Input Capacitance
––– 861 –––
V_GS = 0V
C_oss
Output Capacitance
––– 210 ––– pF V_DS = 25V
C_rss
Reverse Transfer Capacitance
––– 25 –––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
I_S
Continuous Source Current
(Body Diode)
I_SM
Pulsed Source Current
(Body Diode) 
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse RecoveryCharge
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
25
23
Max. Units
0.91
A
37
1.3 V
––– ns
––– nC
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
T_J = 25°C, I_S = 0.91A, V_GS = 0V ‚
T_J = 25°C, I_F = 0.91A
di/dt = 100A/µs ‚
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Pulse width ≤ 300µs; duty cycle ≤ 2%.
ƒ When mounted on 1 inch square copper board, t<10 sec
2
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