IRF7749L2PBF Datasheet, PDF (2/11 Pages) International Rectifier – RoHS Compliant, Halogen Free

IRF7749L2TR/TR1PbF
Static @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BV_DSS
ΔΒV_DSS/ΔT_J
R_DS(on)
V_GS(th)
ΔV_GS(th)/ΔT_J
I_DSS
I_GSS
gfs
Q_g
Q_gs1
Q_gs2
Q_gd
Q_godr
Q_sw
Q_oss
R_G
t_d(on)
t_r
t_d(off)
t_f
C_iss
C_oss
C_rss
C_oss
C_oss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q_gs2 + Q_gd)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
60 ––– ––– V ^VGS ^{= 0V, I}D ^{= 250μA}
––– 0.03 ––– V/°C ^{Reference to 25°C, I}D ^{= 2mA}
––– 1.1 1.50 mΩ ^VGS ^{= 10V, I}D ^{= 120A i}
2.0 2.9 4.0
V ^VDS ^{= V}GS^{, I}D ^{= 250μA}
––– -10 ––– mV/°C
––– ––– 20 μA ^VDS ^{= 60V, V}GS ^{= 0V}
––– ––– 250
V_DS = 48V, V_GS = 0V, T_J = 125°C
––– ––– 100 nA ^VGS ^{= 20V}
––– ––– -100
V_GS = -20V
280 ––– ––– S ^VDS ^{= 10V, I}D ^{= 120A}
––– 200 300
––– 36 –––
V_DS = 30V
––– 12 ––– nC ^VGS ^{= 10V}
––– 71 110
I_D = 120A
––– 100 –––
See Fig. 9
––– 83 –––
––– 67 ––– nC ^VDS ^{= 16V, V}GS ^{= 0V}
––– 1.1 ––– Ω
––– 17 –––
V_DD = 30V, V_GS = 10V i
––– 43 –––
I_D = 120A
––– 78 ––– ns RG=1.8Ω
––– 39 –––
––– 12320 –––
––– 1810 –––
––– 850 –––
V_GS = 0V
pF ^VDS ^{= 25V}
ƒ = 1.0MHz
––– 8060 –––
––– 1310 –––
V_GS = 0V, V_DS = 1.0V, f=1.0MHz
V_GS = 0V, V_DS = 120V, f=1.0MHz
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I_S
Continuous Source Current
––– ––– 200
MOSFET symbol
(Body Diode)
A showing the
I_SM
Pulsed Source Current
(Body Diode) g
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
––– ––– 800
––– ––– 1.3
––– 45 68
––– 78 120
integral reverse
p-n junction diode.
V ^TJ ^{= 25°C, I}S ^{= 120A, V}GS ^{= 0V i}
ns ^TJ ^{= 25°C, I}F ^{= 120A, V}DD ^{= 30V}
nC di/dt = 100A/μs i
Notes:
… Repetitive rating; pulse width limited by max. junction temperature.
‡ Pulse width ≤ 400μs; duty cycle ≤ 2%.
2
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