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IRF7749L1PBF_15 Datasheet, PDF (2/10 Pages) International Rectifier – Optimized for Synchronous Rectification | |||
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IRF7749L1TRPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
BVDSS
ÎÎVDSS/ÎTJ
RDS(on)
VGS(th)
ÎVGS(th)/ÎTJ
IDSS
Drain-to-Source Breakdown Voltage
60
Breakdown Voltage Temp. Coefficient âââ
Static Drain-to-Source On-Resistance âââ
Gate Threshold Voltage
2.0
Gate Threshold Voltage Coefficient
âââ
Drain-to-Source Leakage Current
âââ
âââ
IGSS
Gate-to-Source Forward Leakage
âââ
Gate-to-Source Reverse Leakage
âââ
gfs
Forward Transconductance
280
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss
Coss
Total Gate Charge
âââ
Pre-Vth Gate-to-Source Charge
âââ
Post-Vth Gate-to-Source Charge
âââ
Gate-to-Drain Charge
âââ
Gate Charge Overdrive
âââ
Switch Charge (Qgs2 + Qgd)
âââ
Output Charge
âââ
Gate Resistance
âââ
Turn-On Delay Time
âââ
Rise Time
âââ
Turn-Off Delay Time
âââ
Fall Time
âââ
Input Capacitance
âââ
Output Capacitance
âââ
Reverse Transfer Capacitance
âââ
Output Capacitance
âââ
Output Capacitance
âââ
Typ.
âââ
0.03
1.1
2.9
-10
âââ
âââ
âââ
âââ
âââ
200
36
12
71
100
83
67
1.1
17
43
78
39
12320
1810
850
8060
1310
Max. Units
Conditions
âââ
âââ
1.50
4.0
V VGS = 0V, ID = 250μA
i V/°C Reference to 25°C, ID = 2mA
mΩ VGS = 10V, ID = 120A
V VDS = VGS, ID = 250μA
âââ mV/°C
20
250
100
-100
âââ
μA VDS = 60V, VGS = 0V
VDS = 48V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
S VDS = 10V, ID = 120A
300
âââ
VDS = 30V
âââ nC VGS = 10V
110
ID = 120A
âââ
See Fig. 9
âââ
âââ nC VDS = 16V, VGS = 0V
âââ
âââ
Ãi Ω
VDD = 30V, VGS = 10V
âââ
ID = 120A
âââ ns RG=1.8Ω
âââ
âââ
VGS = 0V
âââ pF VDS = 25V
âââ
Æ = 1.0MHz
âââ
VGS = 0V, VDS = 1.0V, f=1.0MHz
âââ
VGS = 0V, VDS = 120V, f=1.0MHz
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
âââ âââ 200
MOSFET symbol
(Body Diode)
A showing the
ISM
Pulsed Source Current
Ãg (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
âââ âââ 800
âââ âââ 1.3
âââ 45 68
âââ 78 120
integral reverse
p-n junction diode.
i V TJ = 25°C, IS = 120A, VGS = 0V
i ns TJ = 25°C, IF = 120A, VDD = 30V
nC di/dt = 100A/μs
Notes:
Â
Repetitive rating; pulse width limited by max. junction temperature.
 Pulse width ⤠400μs; duty cycle ⤠2%.
2
www.irf.com © 2012 International Rectifier
February 18, 2013
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