IRF7749L1PBF Datasheet, PDF (2/10 Pages) International Rectifier – RoHS Compliant, Halogen Free

IRF7749L1TRPbF
Static @ T_J = 25°C (unless otherwise specified)
Parameter
Min.
BV_DSS
ΔΒV_DSS/ΔT_J
R_DS(on)
V_GS(th)
ΔV_GS(th)/ΔT_J
I_DSS
Drain-to-Source Breakdown Voltage
60
Breakdown Voltage Temp. Coefficient –––
Static Drain-to-Source On-Resistance –––
Gate Threshold Voltage
2.0
Gate Threshold Voltage Coefficient
–––
Drain-to-Source Leakage Current
–––
–––
I_GSS
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
gfs
Forward Transconductance
280
Q_g
Q_gs1
Q_gs2
Q_gd
Q_godr
Q_sw
Q_oss
R_G
t_d(on)
t_r
t_d(off)
t_f
C_iss
C_oss
C_rss
C_oss
C_oss
Total Gate Charge
–––
Pre-Vth Gate-to-Source Charge
–––
Post-Vth Gate-to-Source Charge
–––
Gate-to-Drain Charge
–––
Gate Charge Overdrive
–––
Switch Charge (Q_gs2 + Q_gd)
–––
Output Charge
–––
Gate Resistance
–––
Turn-On Delay Time
–––
Rise Time
–––
Turn-Off Delay Time
–––
Fall Time
–––
Input Capacitance
–––
Output Capacitance
–––
Reverse Transfer Capacitance
–––
Output Capacitance
–––
Output Capacitance
–––
Typ.
–––
0.03
1.1
2.9
-10
–––
–––
–––
–––
–––
200
36
12
71
100
83
67
1.1
17
43
78
39
12320
1810
850
8060
1310
Max. Units
Conditions
–––
–––
1.50
4.0
V VGS = 0V, ID = 250μA
i ^{V/°C Reference to 25°C, ID = 2mA}
mΩ ^VGS ^{= 10V, I}D ^{= 120A}
V ^VDS ^{= V}GS^{, I}D ^{= 250μA}
––– mV/°C
20
250
100
-100
–––
μA ^VDS ^{= 60V, V}GS ^{= 0V}
V_DS = 48V, V_GS = 0V, T_J = 125°C
nA ^VGS ^{= 20V}
V_GS = -20V
S ^VDS ^{= 10V, I}D ^{= 120A}
300
–––
V_DS = 30V
––– nC VGS = 10V
110
I_D = 120A
–––
See Fig. 9
–––
––– nC VDS = 16V, VGS = 0V
–––
–––
Ãi Ω
V_DD = 30V, V_GS = 10V
–––
I_D = 120A
––– ns R_G=1.8Ω
–––
–––
V_GS = 0V
––– pF VDS = 25V
–––
ƒ = 1.0MHz
–––
V_GS = 0V, V_DS = 1.0V, f=1.0MHz
–––
V_GS = 0V, V_DS = 120V, f=1.0MHz
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I_S
Continuous Source Current
––– ––– 200
MOSFET symbol
(Body Diode)
A showing the
I_SM
Pulsed Source Current
Ãg (Body Diode)
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
––– ––– 800
––– ––– 1.3
––– 45 68
––– 78 120
integral reverse
p-n junction diode.
i _V T_J = 25°C, I_S = 120A, V_GS = 0V
i ^{ns TJ = 25°C, IF = 120A, VDD = 30V}
nC di/dt = 100A/μs
Notes:
… Repetitive rating; pulse width limited by max. junction temperature.
‡ Pulse width ≤ 400μs; duty cycle ≤ 2%.
2
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February 18, 2013