IRF7748L1PBF_15 Datasheet, PDF (2/10 Pages) International Rectifier – Optimized for Synchronous Rectification

IRF7748L1TRPbF
Static @ T_J = 25°C (unless otherwise specified)
Parameter
BV_DSS
V_DSS/T_J
R_DS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
V_GS(th)
Gate Threshold Voltage
V_GS(th)/T_J Gate Threshold Voltage Temp. Coefficient
I_DSS
Drain-to-Source Leakage Current
I_GSS
gfs
Q_g
Q_gs1
Q_gs2
Q_gd
Q_godr
Q_sw
Q_oss
R_G
t_d(on)
t_r
t_d(off)
t_f
C_iss
C_oss
C_rss
C_oss
C_oss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre– Vth Gate-to-Source Charge
Post– Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q_{gs2 +} Q_gd)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Diode Characteristics
Parameter
I_S
Continuous Source Current
(Body Diode)
I_SM
Pulsed Source Current
(Body Diode)
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
Min.
60
–––
–––
2.0
–––
–––
–––
–––
–––
176
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max.
––– –––
0.022 –––
1.7 2.2
2.9 4.0
-9.9 –––
––– 20
––– 250
––– 100
––– -100
––– –––
146 220
31 –––
12 –––
40 –––
63 –––
52 –––
82 –––
1.3 –––
19 –––
104 –––
54 –––
77 –––
8075 –––
1150 –––
540 –––
5390 –––
850 –––
Units
Conditions
V
V/°C
m
V_GS = 0V, I_D = 250µA
Reference to 25°C, I_D = 2mA
V_GS = 10V, I_D = 89A 
V V_DS = V_GS, I_D = 250µA
mV/°C
µA
V_DS =60 V, V_GS = 0V
V_DS =60V,V_GS = 0V,T_J =125°C
nA
V_GS = 20V
V_GS = -20V
S V_DS = 10V, I_D =89A
V_DS = 30V
nC V_GS = 10V
I_D = 89A
See Fig.9
nC V_DS = 16V,V_GS = 0V

V_DD = 30V, V_GS = 10V
ns
I_D = 89A
R_G= 1.8
V_GS = 0V
V_DS = 50V
pF ^{ƒ = 1.0MHz}
V_GS=0V, V_DS = 1.0V,ƒ =1.0MHz
V_GS=0V, V_DS = 48V,ƒ =1.0MHz
Min.
–––
–––
–––
–––
–––
Typ. Max.
––– 85
––– 592
––– 1.3
58 –––
113 –––
Units
A
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T_J = 25°C,I_S = 89A,V_GS = 0V 
T_J = 25°C ,I_F = 89A,V_DD = 30V
di/dt = 100A/µs 
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
 Pulse width ≤ 400µs; duty cycle ≤ 2%
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February 18, 2013