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IRF7707TRPBF Datasheet, PDF (2/8 Pages) International Rectifier – Ultra Low On-Resistance | |||
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IRF7707PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
-20 âââ âââ
âââ 0.012 âââ
âââ 14.3 22
ÂÂÂ 18.9 33
V
V/°C
mâ¦
VGS = 0V, ID = -250µA
Reference to 25°C, ID = -1mA
VGS = -4.5V, ID = -7.0A Â
VGS = -2.5V, ID = -6.0A Â
VGS(th)
Gate Threshold Voltage
-0.45 âââ -1.2 V VDS = VGS, ID = -250µA
gfs
Forward Transconductance
15 âââ âââ S VDS = -10V, ID = -7.0A
IDSS
Drain-to-Source Leakage Current
âââ âââ -1.0
âââ âââ -25
µA
VDS = -16V, VGS = 0V
VDS = -16V, VGS = 0V, TJ = 70°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
âââ âââ -100 nA VGS = -12V
âââ âââ 100
VGS = 12V
Qg
Total Gate Charge
âââ 31 47
ID = -7.0A
Qgs
Gate-to-Source Charge
âââ 6.4 âââ nC VDS = -16V
Qgd
Gate-to-Drain ("Miller") Charge
âââ 10 âââ
VGS = -4.5V
td(on)
Turn-On Delay Time
âââ 11 17
VDD = -10V
tr
td(off)
tf
Rise Time
Turn-Off Delay Time
Fall Time
âââ 54 81 ns ID = -1.0A
âââ 134 201
RG = 6.0â¦
âââ 138 207
VGS = -4.5V Â
Ciss
Input Capacitance
âââ 2361 âââ
VGS = 0V
Coss
Output Capacitance
âââ 512 âââ pF VDS = -15V
Crss
Reverse Transfer Capacitance
âââ 323 âââ
Æ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) Â
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
ÂÂÂ ÂÂÂ -1.5
showing the
A integral reverse
G
ÂÂÂ ÂÂÂ -28
p-n junction diode.
S
âââ âââ -1.2 V TJ = 25°C, IS = -1.5A, VGS = 0V Â
âââ 142 213 ns TJ = 25°C, IF = -1.5A
âââ 147 221 nC di/dt = -100A/µs Â
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
 Pulse width ⤠300µs; duty cycle ⤠2%.
 When mounted on 1 inch square copper board, t < 10sec.
2
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