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| IRF7701TR Datasheet, PDF (2/9 Pages) International Rectifier – Ultra Low On-Resistance | |||
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IRF7701
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
-12 âââ âââ V VGS = 0V, ID = -250µA
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
âââ -0.006 âââ
âââ âââ 0.011
âââ âââ 0.015
âââ âââ 0.022
V/°C
â¦
Reference to 25°C, ID = -1mA
VGS = -4.5V, ID = -10A Â
VGS = -2.5V, ID = -8.5A Â
VGS = -1.8V, ID = -7.0A Â
VGS(th)
Gate Threshold Voltage
-0.45 âââ -1.2 V VDS = VGS, ID = -250µA
gfs
Forward Transconductance
21 âââ âââ S VDS = -10V, ID = -10A
IDSS
Drain-to-Source Leakage Current
âââ âââ 1.0
âââ âââ -25
µA
VDS = -12V, VGS = 0V
VDS = -9.6V, VGS = 0V, TJ = 70°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
âââ âââ -100
VGS = -8.0V
âââ âââ 100 nA VGS = 8.0V
Qg
Total Gate Charge
âââ 69 100
ID = -8.0A
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain ("Miller") Charge
âââ 9.1 14
âââ 21 32
nC VDS = -9.6V
VGS = -4.5VÂ
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
âââ 19 âââ ns VDD = -6.0V
âââ 20 âââ
ID = -1.0A
âââ 240 âââ
RD = 6.0â¦
âââ 220 âââ
VGS = -4.5VÂ
Ciss
Input Capacitance
âââ 5050 âââ
VGS = 0V
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
âââ 1520 âââ pF VDS = -10V
âââ 1120 âââ
Æ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) Â
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
Min.
âââ
âââ
âââ
âââ
âââ
Typ.
âââ
âââ
âââ
52
53
Max.
-1.5
-80
-1.2
78
80
Units
A
V
ns
nC
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
TJ = 25°C, IS = -1.5A, VGS = 0V Â
TJ = 25°C, IF = -1.5A
di/dt = 100A/µs Â
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
 Pulse width ⤠300µs; duty cycle ⤠2%.
 When mounted on 1 inch square copper board, t<10 sec
2
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