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| IRF7663TR Datasheet, PDF (2/7 Pages) International Rectifier – Trench Technology | |||
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IRF7663
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
-20 âââ âââ V VGS = 0V, ID = -250uA
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
âââ -0.01 âââ V/°C Reference to 25°C, ID = -1mA
âââ âââ 0.020
âââ âââ 0.040
â¦
VGS = -4.5V, ID = -7.0A Â
VGS = -2.5V, ID = -5.1A Â
VGS(th)
Gate Threshold Voltage
-0.60 âââ -1.2 V VDS = VGS, ID = -250µA
gfs
Forward Transconductance
14.5 âââ âââ S VDS = -10V, ID = -7.0A
IDSS
Drain-to-Source Leakage Current
âââ âââ -1.0
VDS = -16V, VGS = 0V
âââ âââ -25 µA VDS = -16V, VGS = 0V, TJ = 70°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
âââ âââ -100 nA VGS = -12V
âââ âââ 100
VGS = 12V
Qg
Total Gate Charge
âââ 30 45
ID = -6.0A
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain ("Miller") Charge
âââ 5.0 7.5 nC VDS = -10V
âââ 7.0 10.5
VGS = -5.0V Â
td(on)
Turn-On Delay Time
âââ 11 âââ
VDD = -10V
tr
td(off)
tf
Rise Time
Turn-Off Delay Time
Fall Time
âââ 100 âââ ns ID = -6.0A
âââ 125 âââ
RG = 6.2â¦
âââ 172 âââ
RD = 1.64⦠Â
Ciss
Input Capacitance
âââ 2520 âââ
VGS = 0V
Coss
Output Capacitance
âââ 615 âââ pF VDS = -10V
Crss
Reverse Transfer Capacitance
âââ 375 âââ
Æ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) Â
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
Min.
âââ
âââ
âââ
âââ
âââ
Typ. Max.
âââ -1.8
âââ -66
âââ -1.2
70 105
50 75
Units
A
V
ns
nC
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
TJ = 25°C, IS = -7.0A, VGS = 0V Â
TJ = 25°C, IF = -2.5A
di/dt = 100A/µs Â
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
 Pulse width ⤠300µs; duty cycle ⤠2%.
 When mounted on 1 inch square copper board, t<10 sec
 Starting TJ = 25°C, L = 17.8mH
RG = 25â¦, IAS = -3.6A. (See Figure 10)
2
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