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IRF7607TRPBF Datasheet, PDF (2/8 Pages) International Rectifier – Trench Technology
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IRF7607PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
20 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
––– 0.016 –––
––– ––– 0.030
––– ––– 0.045
V/°C
Ω
Reference to 25°C, ID = 1mA
VGS = 4.5V, ID = 6.5A ‚
VGS = 2.5V, ID = 5.2A ‚
VGS(th)
Gate Threshold Voltage
0.60 ––– 1.2 V VDS = VGS, ID = 250µA
gfs
Forward Transconductance
13 ––– ––– S VDS = 10V, ID = 6.5A
IDSS
Drain-to-Source Leakage Current
––– ––– 1.0
––– ––– 25
µA
VDS = 16V, VGS = 0V
VDS = 16V, VGS = 0V, TJ = 70°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– -100 nA VGS = -12V
––– ––– 100
VGS = 12V
Qg
Total Gate Charge
––– 15 22
ID = 6.5A
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain ("Miller") Charge
––– 2.2 3.3
––– 3.5 5.3
nC VDS = 10V
VGS = 5.0V ‚
td(on)
Turn-On Delay Time
––– 8.5 –––
VDD = 10V
tr
td(off)
Rise Time
Turn-Off Delay Time
––– 11 ––– ns ID = 1.0A
––– 36 –––
RG = 6.0Ω
tf
Fall Time
––– 16 –––
RD = 10Ω ‚
Ciss
Input Capacitance
––– 1310 –––
VGS = 0V
Coss
Output Capacitance
––– 150 ––– pF VDS = 15V
Crss
Reverse Transfer Capacitance
––– 36 –––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) 
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– 1.8
showing the
A
integral reverse
G
––– ––– 50
p-n junction diode.
S
––– ––– 1.2 V TJ = 25°C, IS = 1.7A, VGS = 0V ‚
––– 19 29
––– 13 20
ns TJ = 25°C, IF = 1.7A
nC di/dt = 100A/µs ‚
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
‚ Pulse width ≤ 400µs; duty cycle ≤ 2%.
ƒ Surface mounted on FR-4 board, t ≤ 5sec.
2
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