IRF7606PBF Datasheet, PDF (2/7 Pages) International Rectifier – HEXFET Power MOSFET

IRF7606PbF
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)DSS Drain-to-Source Breakdown Voltage
-30 ––– ––– V V_GS = 0V, I_D = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
R_DS(on)
Static Drain-to-Source On-Resistance
––– -0.024 –––
––– 0.075 0.09
––– 0.130 0.15
V/°C
Ω
Reference to 25°C, I_D = -1mA
V_GS = - 10V, I_D = -2.4A ƒ
V_GS = -4.5V, I_D = -1.2A ƒ
V_GS(th)
Gate Threshold Voltage
-1.0 ––– ––– V V_DS = V_GS, I_D = -250µA
g_fs
Forward Transconductance
2.3 ––– ––– S V_DS = -10V, I_D = -1.2A
I_DSS
Drain-to-Source Leakage Current
––– ––– -1.0
––– ––– -25
µA
V_DS = -24V, V_GS = 0V
V_DS = -24V, V_GS = 0V, T_J = 125°C
I_GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– -100 _{n A} V_GS = -20V
––– ––– 100
V_GS = 20V
Q_g
Total Gate Charge
––– 20 30
I_D = -2.4A
Q_gs
Gate-to-Source Charge
––– 2.1 3.1 nC V_DS = -24V
Q_gd
Gate-to-Drain ("Miller") Charge
––– 7.6 11
V_GS = -10V, See Fig. 9 ƒ
t_d(on)
Turn-On Delay Time
––– 13 –––
V_DD = -10V
t_r
t_d(off)
t_f
Rise Time
Turn-Off Delay Time
Fall Time
––– 20 ––– _ns I_D = -2.4A
––– 43 –––
R_G = 6.0Ω
––– 39 –––
R_D = 4.0Ω ƒ
C_iss
Input Capacitance
––– 520 –––
V_GS = 0V
C_oss
Output Capacitance
––– 300 ––– pF V_DS = -25V
C_rss
Reverse Transfer Capacitance
––– 140 –––
ƒ = 1.0MHz, See Fig. 8
Source-Drain Ratings and Characteristics
Parameter
I_S
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) 
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
Min. Typ. Max. Units
Conditions
MOSFET symbol
––– ––– -1.8
showing the
A _{integral reverse}
––– ––– -29
p-n junction diode.
D
G
S
––– ––– -1.2 V T_J = 25°C, I_S = -2.4A, V_GS = 0V ƒ
––– 43 64
––– 50 76
ns T_J = 25°C, I_F = -2.4A
nC di/dt = -100A/µs ƒ
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 10 )
‚ I_SD ≤ -2.4A, di/dt ≤ -130A/µs, V_DD ≤ V_(BR)DSS,
T_J ≤ 150°C
2
ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%.
„ Surface mounted on FR-4 board, t ≤
10sec.
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