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IRF7530PBF_15 Datasheet, PDF (2/8 Pages) International Rectifier – Ultra Low On-Resistance | |||
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IRF7530PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
20 âââ âââ V VGS = 0V, ID = 250uA
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
âââ 0.01 âââ V/°C Reference to 25°C, ID = 1mA
âââ âââ 0.030
âââ âââ 0.045
â¦
VGS = 4.5V, ID = 5.4A Â
VGS = 2.5V, ID = 4.6A Â
VGS(th)
Gate Threshold Voltage
0.60 âââ 1.2 V VDS = VGS, ID = 250µA
gfs
Forward Transconductance
13 âââ âââ S VDS = 10V, ID = 5.4A
IDSS
Drain-to-Source Leakage Current
âââ âââ 1.0
âââ âââ 25
µA
VDS = 16V, VGS = 0V
VDS = 16V, VGS = 0V, TJ = 70°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
âââ âââ 100 nA VGS = 12V
âââ âââ -100
VGS = -12V
Qg
Total Gate Charge
âââ 18 26
ID = 5.4A
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain ("Miller") Charge
âââ 3.4 5.1
âââ 3.4 5.1
nC VDS = 16V
VGS = 4.5V Â
td(on)
Turn-On Delay Time
âââ 8.5 âââ
VDD = 10V
tr
td(off)
tf
Rise Time
Turn-Off Delay Time
Fall Time
âââ 11 âââ ns ID = 1.0A
âââ 36 âââ
RG = 6.0â¦
âââ 16 âââ
RD = 10⦠Â
Ciss
Input Capacitance
âââ 1310 âââ
VGS = 0V
Coss
Output Capacitance
âââ 180 âââ pF VDS = 15V
Crss
Reverse Transfer Capacitance
âââ 150 âââ
Æ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) Â
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
Min.
ÂÂÂ
ÂÂÂ
âââ
âââ
âââ
Typ.
ÂÂÂ
ÂÂÂ
âââ
19
13
Max.
1.3
40
1.2
29
20
Units
A
V
ns
nC
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
TJ = 25°C, IS = 1.3A, VGS = 0V Â
TJ = 25°C, IF = 1.3A
di/dt = 100A/µs Â
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
 Pulse width ⤠400µs; duty cycle ⤠2%.
 When mounted on 1 inch square copper board, t<10 sec
 Starting TJ = 25°C, L = 2.6mH
RG = 25â¦, IAS = 5.0A. (See Figure 10)
2
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