IRF7509PBF-1_15 Datasheet, PDF (2/8 Pages) International Rectifier – Industry-standard pinout Micro-8 Package

IRF7509PbF-1
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
V_(BR)DSS
Parameter
Drain-to-Source Breakdown Voltage
ΔV_(BR)DSS/ΔT_J Breakdown Voltage Temp. Coefficient
R_DS(ON)
Static Drain-to-Source On-Resistance
V_GS(th)
g_fs
Gate Threshold Voltage
Forward Transconductance
I_DSS
IGSS
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
C_iss
C_oss
C_rss
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
N-Ch 30 —
P-Ch -30 —
—
—
V
VGS = 0V, ID = 250µA
V_GS = 0V, I_D = -250µA
N-Ch
P-Ch
— 0.059 —
— -0.039 —
V/°C
Reference to 25°C, ID = 1mA
Reference to 25°C, I_D = -1mA
N-Ch
P-Ch
—
—
—
—
0.09 0.110
0.14 0.175
0.17 0.20
0.30 0.40
Ω
VGS = 10V, ID = 1.7A „
VGS = 4.5V, ID = 0.85A „
V_GS = -10V, I_D =-1.2A „
VGS = -4.5V, ID =-0.6A „
N-Ch 1.0 —
P-Ch -1.0 —
—
—
V
V_DS = V_GS, I_D = 250µA
VDS = VGS, ID = -250µA
N-Ch 1.9 —
P-Ch 0.92 —
—
—
S
VDS = 10V, ID = 0.85A „
V_DS = -10V, I_D = -0.6A
„
N-Ch — — 1.0
VDS = 24 V, VGS = 0V
P-Ch —
N-Ch —
—
—
-1.0
25
µA
V_DS = -24V, V_GS = 0V
VDS = 24 V, VGS = 0V, TJ = 125°C
P-Ch — — -25
V_DS = -24V, V_GS = 0V, T_J = 125°C
N-P –– — ±100
VGS = ± 20V
N-Ch ––
P-Ch —
N-Ch ––
P-Ch —
N-Ch ––
P-Ch —
7.8 12
7.5 11
1.2 1.8
1.3 1.9
2.5 3.8
2.5 3.7
nC
N-Channel
I_D = 1.7A, V_DS = 24V, V_GS = 10V
„
P-Channel
I_D = -1.2A, V_DS = -24V, V_GS = -10V
N-Ch — 4.7 —
P-Ch — 9.7 —
N-Channel
N-Ch — 10 —
V_DD = 15V, I_D = 1.7A, R_G = 6.1Ω,
P-Ch — 12
N-Ch — 12
P-Ch — 19
N-Ch — 5.3
P-Ch — 9.3
—
—
—
—
—
ns
R_D = 8.7Ω
„
P-Channel
V_DD = -15V, I_D = -1.2A, R_G = 6.2Ω,
R_D = 12Ω
N-Ch — 210 —
N-Channel
P-Ch — 180
N-Ch — 80
—
—
pF
V_GS = 0V, V_DS = 25V, ƒ = 1.0MHz
P-Ch — 87 —
P-Channel
ƒ
N-Ch — 32 —
P-Ch — 42 —
V_GS = 0V, V_DS = -25V, ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
N-Ch — — 1.25
I_S
Continuous Source Current (Body Diode)
P-Ch —
N-Ch —
—
—
-1.25
21
A
I _SM
Pulsed Source Current (Body Diode) 
P-Ch — — -16
V_SD
Diode Forward Voltage
N-Ch —
P-Ch —
— 1.2
— -1.2
V
TJ = 25°C, IS = 1.7A, VGS = 0V ƒ
T_J = 25°C, I_S = -1.8A, V_GS = 0V ƒ
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
N-Ch — 40 60 _{ns N-Channel}
P-Ch — 30 45
T_J = 25°C, I_F = 1.7A, di/dt = 100A/µs
N-Ch —
P-Ch —
48
37
72
55
nC
P-Channel
ƒ
T_J = 25°C, I_F = -1.2A, di/dt = -100A/µs
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 21 )
‚ N-Channel I_SD ≤ 1.7A, di/dt ≤ 120A/µs, V_DD ≤ V_(BR)DSS, T_J ≤ 150°C
P-Channel I_SD ≤ -1.2A, di/dt ≤ 160A/µs, V_DD ≤ V_(BR)DSS, T_J ≤ 150°C
ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%.
„ Surface mounted on FR-4 board, t ≤ 10sec.
2
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June 27, 2014