IRF7495PBF_15 Datasheet, PDF (2/8 Pages) International Rectifier – High frequency DC-DC converters

IRF7495PbF
Static @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)DSS
Drain-to-Source Breakdown Voltage 100 ––– ––– V V_GS = 0V, I_D = 250µA
∆V_(BR)DSS/∆T_{J Breakdown Voltage Temp. Coefficient ––– 0.10 ––– V/°C Reference to 25°C, ID = 1mA}
R_DS(on)
Static Drain-to-Source On-Resistance ––– 18
f 22 mΩ V_GS = 10V, I_D = 4.4A
V_GS(th)
Gate Threshold Voltage
2.0 ––– 4.0 V V_DS = V_GS, I_D = 250µA
I_DSS
Drain-to-Source Leakage Current
––– ––– 20 µA V_DS = 100V, V_GS = 0V
––– ––– 250
V_DS = 80V, V_GS = 0V, T_J = 125°C
I_GSS
Gate-to-Source Forward Leakage
––– ––– 200 nA V_GS = 20V
Gate-to-Source Reverse Leakage
––– ––– -200
V_GS = -20V
Dynamic @ T_J = 25°C (unless otherwise specified)
gfs
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
C_iss
C_oss
C_rss
C_oss
C_oss
C_oss eff.
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min.
11
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
34
6.3
11.7
8.7
13
10
36
1530
250
110
980
160
240
Max. Units
Conditions
––– S V_DS = 25V, I_D = 4.4A
51
I_D = 4.4A
––– nC V_DS = 50V
–––
f V_GS = 10V
–––
V_DD = 50V
–––
I_D = 4.4A
––– ns R_G = 6.2Ω
–––
f V_GS = 10V
–––
V_GS = 0V
–––
V_DS = 25V
––– pF ƒ = 1.0MHz
–––
V_GS = 0V, V_DS = 1.0V, ƒ = 1.0MHz
–––
V_GS = 0V, V_DS = 80V, ƒ = 1.0MHz
–––
g V_GS = 0V, V_DS = 0V to 80V
Avalanche Characteristics
E_AS
I_AR
d ^Parameter
Single Pulse Avalanche Energy
Ù Avalanche Current
Typ.
–––
–––
Max.
180
4.4
Units
mJ
A
Diode Characteristics
Parameter
I_S
Continuous Source Current
(Body Diode)
I_SM
Pulsed Source Current
Ù (Body Diode)
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
t_on
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 2.3
MOSFET symbol
D
A showing the
––– ––– 58
integral reverse
G
––– ––– 1.3
––– 42 –––
––– 73 –––
S
p-n junction diode.
f V T_J = 25°C, I_S = 4.4A, V_GS = 0V
f ^{ns TJ = 25°C, IF = 4.4A, VDD = 25V}
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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