IRF7494PBF Datasheet, PDF (2/8 Pages) International Rectifier – HEXFET Power MOSFET

IRF7494PbF
Static @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)DSS
Drain-to-Source Breakdown Voltage 150 ––– ––– V V_GS = 0V, I_D = 250µA
f ^{∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.15 ––– V/°C Reference to 25°C, ID = 1mA}
R_DS(on)
Static Drain-to-Source On-Resistance ––– 35 44 _mΩ V_GS = 10V, I_D = 3.1A
V_GS(th)
Gate Threshold Voltage
2.5 ––– 4.0 V V_DS = V_GS, I_D = 250µA
I_DSS
Drain-to-Source Leakage Current
––– ––– 10 µA V_DS = 120V, V_GS = 0V
––– ––– 250
V_DS = 120V, V_GS = 0V, T_J = 125°C
I_GSS
Gate-to-Source Forward Leakage
––– ––– 100 nA V_GS = 20V
Gate-to-Source Reverse Leakage
––– ––– -100
V_GS = -20V
Dynamic @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
gfs
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
C_iss
C_oss
C_rss
C_oss
C_oss
C_oss eff.
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
12 ––– –––
––– 36 54
––– 7.5 –––
––– 13 –––
––– 15 –––
––– 13 –––
––– 36 –––
––– 14 –––
––– 1750 –––
––– 220 –––
––– 100 –––
––– 870 –––
––– 120 –––
––– 170 –––
S V_DS = 50V, I_D = 5.2A
I_D = 3.1A
f nC VDS = 75V
V_GS = 10V
V_DD = 75V
I_D = 3.1A
f ns RG = 6.5Ω
V_GS = 10V
V_GS = 0V
V_DS = 25V
pF ƒ = 1.0MHz
V_GS = 0V, V_DS = 1.0V, ƒ = 1.0MHz
g ^{VGS = 0V, VDS = 120V, ƒ = 1.0MHz}
V_GS = 0V, V_DS = 0V to 120V
Avalanche Characteristics
E_AS
I_AR
d ^Parameter
Single Pulse Avalanche Energy
Ù Avalanche Current
Typ.
–––
–––
Max.
370
3.1
Units
mJ
A
Diode Characteristics
Parameter
I_S
Continuous Source Current
(Body Diode)
I_SM
Pulsed Source Current
Ù (Body Diode)
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
t_on
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 2.7
MOSFET symbol
D
A showing the
––– ––– 42
integral reverse
G
––– ––– 1.3
––– 55 –––
––– 140 –––
f ^{p-n junction diode.}
S
V T_J = 25°C, I_S = 3.1A, V_GS = 0V
f ^{ns TJ = 25°C, IF = 3.1A, VDD = 25V}
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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