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IRF7493 Datasheet, PDF (2/9 Pages) International Rectifier – HEXFET Power MOSFET | |||
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IRF7493
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
âÎVDSS/âTJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
80 âââ âââ V VGS = 0V, ID = 250µA
âââ 0.074 âââ mV/°C Reference to 25°C, ID = 1mA
e âââ 11.5 15 m⦠VGS = 10V, ID = 5.6A
VGS(th)
IDSS
Gate Threshold Voltage
Drain-to-Source Leakage Current
2.0 âââ 4.0
âââ âââ 20
V VDS = VGS, ID = 250µA
µA VDS = 80V, VGS = 0V
âââ âââ 250
VDS = 64V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
âââ âââ 200 nA VGS = 20V
Gate-to-Source Reverse Leakage
âââ âââ -200
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
gfs
Forward Transconductance
13 âââ âââ
Qg
Total Gate Charge
âââ 35 53
Qgs
Gate-to-Source Charge
âââ 5.7 âââ
Qgd
Gate-to-Drain Charge
âââ 12 âââ
td(on)
Turn-On Delay Time
âââ 8.3 âââ
tr
Rise Time
âââ 7.5 âââ
td(off)
Turn-Off Delay Time
âââ 30 âââ
tf
Fall Time
âââ 12 âââ
Ciss
Input Capacitance
âââ 1510 âââ
Coss
Output Capacitance
âââ 320 âââ
Crss
Reverse Transfer Capacitance
âââ 130 âââ
Coss
Output Capacitance
âââ 1130 âââ
Coss
Output Capacitance
âââ 210 âââ
Crss eff.
Effective Output Capacitance
âââ 320 âââ
S VDS = 15V, ID = 5.6A
ID = 5.6A
VDS = 40V
VGS = 10V
e VDD = 40V,
ID = 5.6A
ns RG = 6.2â¦
VGS = 10V
VGS = 0V
pF VDS = 25V
Æ = 1.0MHz
VGS = 0V, VDS = 1.0V, Æ = 1.0MHz
VGS = 0V, VDS = 64V, Æ = 1.0MHz
g VGS = 0V, VDS = 0V to 64V
Avalanche Characteristics
EAS
IAR
d Parameter
Single Pulse Avalanche Energy
ÃÂ Avalanche Current
Typ.
âââ
âââ
Max.
180
5.6
Units
mJ
A
Diode Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
ÃÂ (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Min. Typ. Max. Units
Conditions
âââ âââ 9.3
MOSFET symbol
âââ âââ 74
A showing the
integral reverse
âââ âââ 1.3
âââ 37 56
âââ 52 78
p-n junction diode.
e V TJ = 25°C, IS = 5.6A, VGS = 0V
e ns TJ = 25°C, IF = 5.6A, VDD = 15V
nC di/dt = 100A/µs
2
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