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| IRF7492TRPBF Datasheet, PDF (2/8 Pages) International Rectifier – High frequency DC-DC converters | |||
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IRF7492PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BV(BR)DSS Drain-to-Source Breakdown Voltage
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
IGSS
Gate-to-Source Reverse Leakage
200
âââ
âââ
2.5
âââ
âââ
âââ
âââ
âââ
0.20
64
âââ
âââ
âââ
âââ
âââ
âââ
âââ
79
âââ
10
250
100
-100
V
V/°C
mâ¦
V
µA
nA
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA Â
VGS = 10V, ID = 2.2A Â
VDS = VGS, ID = 250µA
VDS = 160V, VGS = 0V
VDS = 160V, VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max.
gfs
Forward Transconductance
7.9 âââ âââ
Qg
Total Gate Charge
âââ 39 59
Qgs
Gate-to-Source Charge
âââ 9.2 âââ
Qgd
Gate-to-Drain ("Miller") Charge
âââ 15 âââ
td(on)
Turn-On Delay Time
âââ 15 âââ
tr
Rise Time
âââ 13 âââ
td(off)
Turn-Off Delay Time
âââ 27 âââ
tf
Fall Time
âââ 14 âââ
Ciss
Input Capacitance
âââ 1820 âââ
Coss
Output Capacitance
âââ 190 âââ
Crss
Reverse Transfer Capacitance
âââ 94 âââ
Coss
Output Capacitance
âââ 780 âââ
Coss
Output Capacitance
âââ 89 âââ
Coss eff. Effective Output Capacitance
âââ 150 âââ
Units
S
nC
ns
pF
Conditions
VDS = 50V, ID = 3.7A
ID = 2.2A
VDS = 100V
VGS = 10V
VDD = 100V
ID = 2.2A
RG = 6.5â¦
VGS = 10V Â
VGS = 0V
VDS = 25V
Æ = 1.0MHz
VGS = 0V, VDS = 1.0V, Æ = 1.0MHz
VGS = 0V, VDS = 160V, Æ = 1.0MHz
VGS = 0V, VDS = 0V to 160V Â
Avalanche Characteristics
Parameter
EAS
Single Pulse Avalanche EnergyÂ
IAR
Avalanche CurrentÂ
Typ.
âââ
âââ
Max.
130
4.4
Units
mJ
A
Diode Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) Â
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
2
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
âââ âââ 2.3
A showing the
integral reverse
G
âââ âââ 30
p-n junction diode.
S
âââ âââ 1.3 V TJ = 25°C, IS = 2.2A, VGS = 0V Â
âââ 69 100 ns TJ = 25°C, IF = 2.2A
âââ 200 310 nC di/dt = 100A/µs Â
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