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| IRF7490PBF Datasheet, PDF (2/9 Pages) International Rectifier – HEXFET Power MOSFET | |||
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IRF7490PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
IGSS
Gate-to-Source Reverse Leakage
100
âââ
âââ
2.0
âââ
âââ
âââ
âââ
âââ
0.11
33
âââ
âââ
âââ
âââ
âââ
âââ
âââ
39
4.0
20
250
200
-200
V
V/°C
mâ¦
V
µA
nA
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA Â
VGS = 10V, ID = 3.2A Â
VDS = VGS, ID = 250µA
VDS = 100V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
8.0 âââ âââ S VDS = 50V, ID = 3.2A
Qg
Total Gate Charge
âââ 37 56
ID = 3.2A
Qgs
Gate-to-Source Charge
âââ 8.0
nC VDS = 50V
Qgd
Gate-to-Drain ("Miller") Charge
âââ 10
VGS = 10V,
td(on)
Turn-On Delay Time
âââ 13 âââ
VDD = 100V
tr
td(off)
tf
Rise Time
Turn-Off Delay Time
Fall Time
âââ 4.2 âââ ns ID = 3.2A
âââ 51 âââ
RG = 9.1â¦
âââ 11 âââ
VGS = 10V Â
Ciss
Input Capacitance
âââ 1720 âââ
VGS = 0V
Coss
Output Capacitance
âââ 220 âââ
VDS = 25V
Crss
Reverse Transfer Capacitance
âââ 25 âââ pF Æ = 1.0MHz
Coss
Output Capacitance
âââ 1650 âââ
VGS = 0V, VDS = 1.0V, Æ = 1.0MHz
Coss
Coss eff.
Output Capacitance
Effective Output Capacitance
âââ 130 âââ
âââ 250 âââ
VGS = 0V, VDS = 80V, Æ = 1.0MHz
VGS = 0V, VDS = 0V to 80V Â
Avalanche Characteristics
Parameter
EAS
Single Pulse Avalanche EnergyÂ
IAR
Avalanche CurrentÂ
Typ.
âââ
âââ
Max.
91
3.2
Units
mJ
A
Diode Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) Â
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
2
Min.
âââ
âââ
âââ
âââ
âââ
Typ.
âââ
âââ
âââ
67
220
Max.
2.3
43
1.3
100
330
Units
A
V
ns
nC
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
TJ = 25°C, IS = 3.2A, VGS = 0V Â
TJ = 25°C, IF = 3.2A
di/dt = 100A/µs Â
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