IRF7484PBF Datasheet, PDF (2/10 Pages) International Rectifier – HEXFET® Power MOSFET

IRF7484PbF
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
V_(BR)DSS
∆V_(BR)DSS/∆T_J
R_DS(on)
V_GS(th)
g_fs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
I_DSS
Drain-to-Source Leakage Current
I_GSS
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
C_iss
C_oss
C_rss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
40 ––– –––
––– 0.040 –––
––– ––– 10
1.0 ––– 2.0
V
V/°C
mΩ
V
V_GS = 0V, I_D = 250µA
Reference to 25°C, I_D = 1mA
V_GS = 7.0V, I_D = 14A ‚
V_DS = V_GS, I_D = 250µA
40 ––– ––– S V_DS = 10V, I_D = 14A
––– ––– 20 _µA V_DS = 40V, V_GS = 0V
––– ––– 250
V_DS = 32V, V_GS = 0V, T_J = 125°C
––– ––– 200 _nA V_GS = 8.0V
––– ––– -200
V_GS = -8.0V
––– 69 100
I_D = 14A
––– 9.0 ––– nC V_DS = 32V
––– 16 –––
V_GS = 7.0V
––– 9.3 –––
V_DD = 20V ‚
––– 5.0 ––– _ns I_D = 1.0A
––– 180 –––
R_G = 6.2Ω
––– 58 –––
V_GS = 7.0V
––– 3520 –––
V_GS = 0V
––– 660 ––– pF V_DS = 25V
––– 76 –––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
I_S
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) 
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– 2.3
showing the
A
integral reverse
G
––– ––– 110
p-n junction diode.
S
––– ––– 1.3 V T_J = 25°C, I_S = 2.3A, V_GS = 0V ‚
––– 59 89 ns T_J = 25°C, I_F = 2.3A
––– 110 170 nC di/dt = 100A/µs ‚
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Pulse width ≤ 400µs; duty cycle ≤ 2%.
ƒ Surface mounted on 1 in square Cu board.
„ Starting T_J = 25°C, L = 2.3mH, R_G = 25Ω,
I_AS = 14A. (See Figure 12).
… I_SD ≤ 14A, di/dt ≤ 140A/µs, V_DD ≤ V_(BR)DSS,
T_J ≤ 150°C.
† Limited by T_Jmax , see Fig.16c, 16d, 19, 20 for typical repetitive
avalanche performance.
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