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| IRF7468PBF Datasheet, PDF (2/8 Pages) International Rectifier – SMPS MOSFET | |||
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IRF7468PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
40
âââ
âââ
âââ
âââ
VGS(th)
Gate Threshold Voltage
0.8
âââ
IDSS
Drain-to-Source Leakage Current
âââ
Gate-to-Source Forward Leakage
âââ
IGSS
Gate-to-Source Reverse Leakage
âââ
âââ âââ
0.025 âââ
11.7 15.5
13.0 17.0
18.0 35.0
âââ 2.0
âââ 20
âââ 100
âââ 200
âââ -200
V VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
VGS = 10V, ID = 9.4A Â
m⦠VGS = 4.5V, ID = 7.5A Â
VGS = 4.5V, ID = 4.7A Â
V VDS = VGS, ID = 250µA
µA VDS = 32V, VGS = 0V
VDS = 32V, VGS = 0V, TJ = 125°C
nA VGS = 12V
VGS = -12V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Qg
Qgs
Qgd
Qoss
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
27 âââ âââ
âââ 23 34
âââ 6.4 9.6
âââ 6.7 10
âââ 17 26
âââ 7.6 âââ
âââ 2.3 âââ
âââ 20 âââ
âââ 3.8 âââ
âââ 2460 âââ
âââ 490 âââ
âââ 38 âââ
S VDS = 20V, ID = 8.0A
ID = 8.0A
nC VDS = 20V
VGS = 4.5V, Â
VGS = 0V, VDS = 16V
VDD = 20V
ns ID = 8.0A
RG = 1.8â¦
VGS = 4.5V Â
VGS = 0V
VDS = 20V
pF Æ = 1.0MHz
Avalanche Characteristics
Symbol
EAS
IAR
Parameter
Single Pulse Avalanche EnergyÂ
Avalanche CurrentÂ
Typ.
âââ
âââ
Max.
160
8.0
Units
mJ
A
Diode Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) Â
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
2
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
âââ âââ 2.3
A showing the
integral reverse
G
âââ âââ 74
p-n junction diode.
S
âââ 0.81 1.3 V TJ = 25°C, IS = 8.0A, VGS = 0V Â
âââ 0.65 âââ
TJ = 125°C, IS = 8.0A, VGS = 0V Â
âââ 45 68 ns TJ = 25°C, IF = 8.0A, VR=20V
âââ 76 110 nC di/dt = 100A/µs Â
âââ 58 87 ns TJ = 125°C, IF = 8.0A, VR=20V
âââ 110 160 nC di/dt = 100A/µs Â
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