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IRF7457 Datasheet, PDF (2/8 Pages) International Rectifier – Power MOSFET(Vdss=20V, Rds(on)max=7.0mohm, Id=15A) | |||
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IRF7457
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
20
âââ
âââ
âââ
VGS(th)
Gate Threshold Voltage
1.0
IDSS
Drain-to-Source Leakage Current
âââ
âââ
IGSS
Gate-to-Source Forward Leakage
âââ
Gate-to-Source Reverse Leakage
âââ
âââ âââ
0.023 âââ
5.5 7.0
8.0 10.5
âââ 3.0
âââ 20
âââ 100
âââ 200
âââ -200
V
V/°C
mâ¦
V
µA
nA
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 15A Â
VGS = 4.5V, ID = 12A Â
VDS = VGS, ID = 250µA
VDS = 16V, VGS = 0V
VDS = 16V, VGS = 0V, TJ = 125°C
VGS = 16V
VGS = -16V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Qg
Qgs
Qgd
Qoss
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
30 âââ âââ
âââ 28 42
âââ 11 17
âââ 10 15
âââ 25 38
âââ 14 âââ
âââ 16 âââ
âââ 16 âââ
âââ 7.5 âââ
âââ 3100 âââ
âââ 1600 âââ
âââ 270 âââ
S VDS = 16V, ID = 12A
ID = 12A
nC VDS = 10V
VGS = 4.5V, Â
VGS = 0V, VDS = 10V
VDD = 10V,
ns ID = 12A
RG = 1.8â¦
VGS = 4.5V Â
VGS = 0V
VDS = 10V
pF Æ = 1.0MHz
Avalanche Characteristics
Parameter
EAS
Single Pulse Avalanche EnergyÂ
IAR
Avalanche CurrentÂ
Typ.
âââ
âââ
Max.
265
15
Units
mJ
A
Diode Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) Â
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
2
Min.
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
Typ. Max.
âââ 2.5
âââ 120
0.8 1.3
0.67 âââ
50 75
70 105
50 75
74 110
Units
A
V
ns
nC
ns
nC
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
TJ = 25°C, IS = 12A, VGS = 0V Â
TJ = 125°C, IS = 12A, VGS = 0V
TJ = 25°C, IF = 12A, VR= 15V
di/dt = 100A/µs Â
TJ = 125°C, IF = 12A, VR=15V
di/dt = 100A/µs Â
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