IRF7456PBF Datasheet, PDF (2/8 Pages) International Rectifier – SMPS MOSFET

IRF7456PbF
Static @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)DSS Drain-to-Source Breakdown Voltage
20 ––– –––
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.024 –––
––– 0.00470.0065
R_DS(on)
Static Drain-to-Source On-Resistance ––– 0.00570.0075
––– 0.011 0.020
V_GS(th)
I_DSS
Gate Threshold Voltage
Drain-to-Source Leakage Current
0.6 ––– 2.0
––– ––– 20
––– ––– 100
Gate-to-Source Forward Leakage
––– ––– 200
I_GSS
Gate-to-Source Reverse Leakage
––– ––– -200
V V_GS = 0V, I_D = 250µA
V/°C Reference to 25°C, I_D = 1mA
Ω ^{VGS = 10V, ID = 16A ƒ}
V_GS = 4.5V, I_D = 13A ƒ
V_GS = 2.8V, I_D = 3.5A ƒ
V V_DS = V_GS, I_D = 250µA
µA ^{VDS = 16V, VGS = 0V}
V_DS = 16V, V_GS = 0V, T_J = 125°C
nA ^{VGS = 12V}
V_GS = -12V
Dynamic @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max.
g_fs
Forward Transconductance
Q_g
Total Gate Charge
44 ––– –––
––– 41 62
Q_gs
Gate-to-Source Charge
Q_gd
Gate-to-Drain ("Miller") Charge
––– 9.7 15
––– 18 27
t_d(on)
t_r
Turn-On Delay Time
Rise Time
––– 20 –––
––– 25 –––
t_d(off)
t_f
Turn-Off Delay Time
Fall Time
––– 50 –––
––– 52 –––
C_iss
Input Capacitance
C_oss
Output Capacitance
––– 3640 –––
––– 1570 –––
C_rss
Reverse Transfer Capacitance
––– 330 –––
Units
S
nC
ns
pF
Conditions
V_DS = 10V, I_D = 16A
I_D = 16A
V_DS = 16V
V_GS = 5.0V, ƒ
V_DD = 10V
I_D = 1.0A
R_G = 6.0Ω
V_GS = 4.5V ƒ
V_GS = 0V
V_DS = 15V
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
E_AS
Single Pulse Avalanche Energy‚
I_AR
Avalanche Current
E_AR
Repetitive Avalanche Energy
Typ.
–––
–––
–––
Max.
250
16
0.25
Units
mJ
A
mJ
Diode Characteristics
Parameter
I_S
Continuous Source Current
(Body Diode)
I_SM
Pulsed Source Current
(Body Diode) 
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse RecoveryCharge
2
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– 2.5
A ^{showing the}
integral reverse
G
––– ––– 130
p-n junction diode.
S
––– ––– 1.2 V T_J = 25°C, I_S = 2.5A, V_GS = 0V ƒ
––– 48 72 ns T_J = 25°C, I_F = 2.5A
––– 74 110 nC di/dt = 100A/µs ƒ
www.irf.com