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| IRF7450TRPBF Datasheet, PDF (2/8 Pages) International Rectifier – High frequency DC-DC converters | |||
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IRF7450PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
IGSS
Gate-to-Source Reverse Leakage
200
âââ
âââ
3.0
âââ
âââ
âââ
âââ
âââ
0.26
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
0.17
5.5
25
250
100
-100
V
V/°C
â¦
V
µA
nA
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA Â
VGS = 10V, ID = 1.5A Â
VDS = VGS, ID = 250µA
VDS = 200V, VGS = 0V
VDS = 160V, VGS = 0V, TJ = 125°C
VGS = 30V
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
gfs
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
2.6 âââ âââ S VDS = 50V, ID = 1.5A
âââ 26 39
ID = 1.5A
âââ 6.0 9.0 nC VDS = 160V
âââ 12 18
VGS = 10V,
âââ 10 âââ
VDD = 100V
âââ 3.0 âââ ns ID = 1.5A
âââ 17 âââ
RG = 6.0â¦
âââ 18 âââ
VGS = 10V Â
âââ 940 âââ
VGS = 0V
âââ 160 âââ
VDS = 25V
âââ 33 âââ pF Æ = 1.0MHz
âââ 1100 âââ
VGS = 0V, VDS = 1.0V, Æ = 1.0MHz
âââ 66 âââ
âââ 25 âââ
VGS = 0V, VDS = 160V, Æ = 1.0MHz
VGS = 0V, VDS = 0V to 160V Â
Avalanche Characteristics
Parameter
EAS
Single Pulse Avalanche EnergyÂ
IAR
Avalanche CurrentÂ
Typ.
âââ
âââ
Max.
230
2.5
Units
mJ
A
Diode Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) Â
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
2
Min.
âââ
âââ
âââ
âââ
âââ
Typ.
âââ
âââ
âââ
97
350
Max.
2.3
20
1.3
146
525
Units
A
V
ns
nC
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
TJ = 25°C, IS = 1.5A, VGS = 0V Â
TJ = 25°C, IF = 1.5A
di/dt = 100A/µs Â
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