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| IRF7420PBF_15 Datasheet, PDF (2/9 Pages) International Rectifier – Ultra Low On-Resistance | |||
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IRF7420PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max.
-12 âââ âââ
âââ 0.007 âââ
âââ âââ 14
ÂÂÂ âââ 17.5
ÂÂÂ âââ 26
-0.4 âââ -0.9
32 âââ âââ
âââ âââ -1.0
âââ âââ -25
âââ âââ -100
âââ âââ 100
âââ 38 âââ
âââ 8.1 âââ
âââ 8.7 âââ
âââ 8.8 13
âââ 8.8 13
âââ 291 437
âââ 225 338
âââ 3529 âââ
âââ 1013 âââ
âââ 656 âââ
Units
V
V/°C
mâ¦
V
S
µA
nA
nC
ns
pF
Conditions
VGS = 0V, ID = -250µA
Reference to 25°C, ID = -1mA
VGS = -4.5V, ID = -11.5A Â
VGS = -2.5V, ID = -9.8A Â
VGS = -1.8V, ID = -8.1A Â
VDS = VGS, ID = -250µA
VDS = -10V, ID = -11.5A
VDS = -9.6V, VGS = 0V
VDS = -9.6V, VGS = 0V, TJ = 70°C
VGS = -8V
VGS = 8V
ID = -11.5A
VDS = -6V
VGS = -4.5V Â
VDD = -6V, VGS = -4.5V
ID = -1.0A
RD = 6â¦
RG = 6⦠Â
VGS = 0V
VDS = -10V
Æ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) Â
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
ÂÂÂ ÂÂÂ -2.5
showing the
A
integral reverse
G
ÂÂÂ ÂÂÂ -46
p-n junction diode.
S
âââ âââ -1.2 V TJ = 25°C, IS = -2.5A, VGS = 0V Â
âââ 62 93 ns TJ = 25°C, IF = -2.5A
âââ 61 92 µC di/dt = -100A/µs Â
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
 Pulse width ⤠400µs; duty cycle ⤠2%.
 Surface mounted on 1 in square Cu board, t ⤠10sec.
2
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