IRF7413ZUPBF Datasheet, PDF(2/10 Page) International Rectifier

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IRF7413ZUPBF Datasheet, PDF (2/10 Pages) International Rectifier – HEXFT Power MOSFET

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IRF7413ZUPbF

Static @ TJ = 25Â°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

BVDSS

âÎVDSS/âTJ

RDS(on)

VGS(th)

âVGS(th)/âTJ

IDSS

IGSS

gfs

Qgs1

Qgs2

Qgd

Qgodr

Qsw

Qoss

td(on)

td(off)

Ciss

Coss

Crss

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

Gate Threshold Voltage Coefficient

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Forward Transconductance

Total Gate Charge

Pre-Vth Gate-to-Source Charge

Post-Vth Gate-to-Source Charge

Gate-to-Drain Charge

Gate Charge Overdrive

Switch Charge (Qgs2 + Qgd)

Output Charge

Gate Resistance

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

âââ

1.35

âââ

0.025

8.0

10.5

1.80

-5.0

âââ

9.5

3.0

1.0

3.0

2.5

4.0

5.6

2.3

8.7

6.3

3.8

1210

270

140

âââ

2.25

âââ

1.0

150

100

-100

âââ

4.5

âââ

V VGS = 0V, ID = 250ÂµA

V/Â°C

mâ¦

Reference to 25Â°C, ID = 1mA

e VGS = 10V, ID = 13A

e VGS = 4.5V, ID = 10A

V VDS = VGS, ID = 250ÂµA

mV/Â°C

ÂµA VDS = 24V, VGS = 0V

VDS = 24V, VGS = 0V, TJ = 125Â°C

nA VGS = 20V

VGS = -20V

S VDS = 15V, ID = 10A

VDS = 15V

nC VGS = 4.5V

ID = 10A

See Fig. 16

nC VDS = 15V, VGS = 0V

â¦

VDD = 16V, VGS = 4.5V

ID = 10A

ns Clamped Inductive Load

VGS = 0V

pF VDS = 15V

Æ = 1.0MHz

Avalanche Characteristics

Parameter

EAS

IAR

d Single Pulse Avalanche Energy

Â Avalanche Current

Typ.

âââ

Max.

Units

Diode Characteristics

Parameter

Min. Typ. Max. Units

Conditions

Continuous Source Current

âââ âââ 3.1

MOSFET symbol

(Body Diode)

A showing the

ISM

Pulsed Source Current

ÃÂ (Body Diode)

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

âââ âââ 100

âââ âââ 1.0

âââ 24 36

âââ 16 24

integral reverse

p-n junction diode.

e V TJ = 25Â°C, IS = 10A, VGS = 0V

ns TJ = 25Â°C, IF = 10A, VDD = 15V

e nC di/dt = 100A/Âµs

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

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