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IRF7413PBF_15 Datasheet, PDF (2/9 Pages) International Rectifier – ULTAR LOW ON RESISTANCE | |||
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IRF7413PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min Typ Max Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
IGSS
Gate-to-Source Reverse Leakage
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain ("Miller") Charge
RG
Gate Resistance
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
30 âââ âââ V VGS = 0V, ID = 250µA
âââ
âââ
âââ
0.034 âââ
âââ 0.011
âââ 0.018
V/°C Reference to 25°C, ID = 1mA
ff â¦
VGS = 10V, ID = 7.3A
VGS = 4.5V, ID = 3.7A
1.0 âââ 3.0 V VDS = VGS, ID = 250µA
10 âââ âââ S VDS = 10V, ID = 3.7A
âââ âââ 12
âââ âââ 25
µA
VDS = 30V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
âââ
âââ
âââ -100
âââ 100
nA
VGS = -20V
VGS = 20V
âââ 52 79
ID = 7.3A
âââ 6.1 9.2
âââ 16 23
âââ âââ 3.7
f nC VDS = 24V
VGS = 10V, See Fig. 6 and 9
â¦
âââ 8.6 âââ
VDD = 15V
âââ 50 âââ
âââ 52 âââ
âââ 46 âââ
âââ 1800 âââ
âââ 680 âââ
âââ 240 âââ
ID = 7.3A
f ns RG = 6.2 â¦
RG = 2.0â¦, See Fig. 10
VGS = 0V
pF VDS = 25V
Æ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Symbol
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
ÃÂ Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Min. Typ. Max. Units
Conditions
âââ âââ 3.1
âââ âââ 58
âââ âââ 1.0
âââ 74 110
âââ 200 300
MOSFET symbol
A showing the
integral reverse
e p-n junction diode.
V TJ = 25°C, IS = 7.3A, VGS = 0V
e ns TJ = 25°C, IF = 7.3A
nC di/dt = 100A/µs
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
 Starting TJ = 25°C, L = 9.8mH
RG = 25â¦, IAS =7.3A. (See Figure 12)
 ISD ⤠7.3A, di/dt ⤠100A/µs, VDD ⤠V(BR)DSS,
TJ ⤠150°C
 Pulse width ⤠300µs; duty cycle ⤠2%.
Â
Surface mounted on FR-4 board
 Rθ is measured at TJ approximately 90°C
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