IRF7342D2PBF_15 Datasheet, PDF (2/11 Pages) International Rectifier – Ideal For Buck Regulator Applications

IRF7342D2PbF
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)DSS Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
R_DS(on)
Static Drain-to-Source On-Resistance
V_GS(th)
g_fs
Gate Threshold Voltage
Forward Transconductance
I_DSS
Drain-to-Source Leakage Current
I_GSS
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
C_iss
C_oss
C_rss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-55 ––– –––
––– -0.054 –––
––– 95 105
––– 150 170
-1.0 ––– –––
3.3 ––– –––
––– ––– -2.0
––– ––– -25
––– ––– -100
––– ––– 100
––– 26 38
––– 3.0 4.5
––– 8.4 13
––– 14 22
––– 10 15
––– 43 64
––– 22 32
––– 690 –––
––– 210 –––
––– 86 –––
V
V/°C
mΩ
V
S
µA
nA
nC
ns
pF
V_GS = 0V, I_D = -250µA
Reference to 25°C, I_D = -1mA
V_GS = -10V, I_D = -3.4A ƒ
V_GS = -4.5V, I_D = -2.7A ƒ
V_DS = V_GS, I_D = -250µA
V_DS = -10V, I_D = -3.1A
V_DS = -44V, V_GS = 0V
V_DS = -44V, V_GS = 0V, T_J = 70°C
V_GS = -20V
V_GS = 20V
I_D = -3.1A
V_DS = -44V
V_GS = -10V, See Fig. 6 & 14 ƒ
V_DD = -28V
I_D = -1.0A
R_G = 6.0Ω
V_GS = -10V, ƒ
V_GS = 0V
V_DS = -25V
ƒ = 1.0MHz, See Fig. 5
MOSFET Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I_S
ISM
Continuous Source Current(Body Diode) ––– ––– -2.0
Pulsed Source Current (Body Diode) ––– ––– -27 ^A
V_SD
Body Diode Forward Voltage
––– ––– -1.2 V T_J = 25°C, I_S = -2.0A, V_GS = 0V
t_rr
Reverse Recovery Time (Body Diode) ––– 54 80
Q_rr
Reverse Recovery Charge
––– 85 130
Schottky Diode Maximum Ratings
ns T_J = 25°C, I_F = -2.0A
nC di/dt = 100A/µs ƒ
If (av)
I_SM
Parameter
Max. Average Forward Current
Max. peak one cycle Non-repetitive
Surge current
Max. Units
3.0 _A
490 _A
70
Conditions
50% Duty Cycle. Rectangular Wave, T_A = 57°C
See Fig. 21
5µs sine or 3µs Rect. pulse
Following any rated
10ms sine or 6ms Rect. pulse load condition &
with Vrrm applied
Schottky Diode Electrical Specifications
Vfm
Vrrm
Irm
Ct
Parameter
Max. Forward Voltage Drop
Max. Working Peak Reverse Voltage
Max. Reverse Leakage Current
Max. Junction Capacitance
Max. Units
0.61
0.76
0.53 ^V
0.65
60 _V
2.0 mA
30
145 pF
Conditions
If = 3.0A, Tj = 25°C
If = 6.0A, Tj = 25°C
If = 3.0A, Tj = 125°C
If = 6.0A, Tj = 125°C
Vr = 60V
Tj = 25°C
Tj = 125°C
Vr = 5Vdc ( 100kHz to 1 MHz) 25°C
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