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IRF7316TRPBF Datasheet, PDF (2/7 Pages) International Rectifier – Generation V Technology | |||
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IRF7316PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
-30   V VGS = 0V, ID = -250µA
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient  0.022  V/°C Reference to 25°C, ID = -1mA
RDS(on)
Static Drain-to-Source On-Resistance
ÂÂÂ 0.042 0.058
ÂÂÂ 0.076 0.098
â¦
VGS = -10V, ID = -4.9A Â
VGS = -4.5V, ID = -3.6A Â
VGS(th)
Gate Threshold Voltage
-1.0   V VDS = VGS, ID = -250µA
gfs
Forward Transconductance
ÂÂÂ 7.7 ÂÂÂ S VDS = -15V, ID = -4.9A
IDSS
Drain-to-Source Leakage Current
ÂÂÂ ÂÂÂ -1.0
ÂÂÂ ÂÂÂ -25
µA
VDS = -24V, VGS = 0V
VDS = -24V, VGS = 0V, TJ = 55°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
ÂÂÂ ÂÂÂ 100 nA VGS = -20V
ÂÂÂ ÂÂÂ -100
VGS = 20V
Qg
Total Gate Charge
ÂÂÂ 23 34
ID = -4.9A
Qgs
Gate-to-Source Charge
ÂÂÂ 3.8 5.7 nC VDS = -15V
Qgd
Gate-to-Drain ("Miller") Charge
ÂÂÂ 5.9 8.9
VGS = -10V, See Fig. 10 Â
td(on)
Turn-On Delay Time
ÂÂÂ 13 19
VDD = -15V
tr
td(off)
Rise Time
Turn-Off Delay Time
ÂÂÂ 13 20
ÂÂÂ 34 51
ns ID = -1.0A
RG = 6.0â¦
tf
Fall Time
ÂÂÂ 32 48
RD = 15⦠Â
Ciss
Input Capacitance
ÂÂÂ 710 ÂÂÂ
VGS = 0V
Coss
Output Capacitance
ÂÂÂ 380 ÂÂÂ pF VDS = -25V
Crss
Reverse Transfer Capacitance
ÂÂÂ 180 ÂÂÂ
 = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) Â
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
Min. Typ. Max.
ÂÂÂ ÂÂÂ -2.5
ÂÂÂ ÂÂÂ -30
ÂÂÂ -0.78 -1.0
ÂÂÂ 44 66
ÂÂÂ 42 63
Units
A
V
ns
nC
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
TJ = 25°C, IS = -1.7A, VGS = 0V Â
TJ = 25°C, IF = -1.7A
di/dt = 100A/µs Â
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
 Starting TJ = 25°C, L = 35mH
RG = 25â¦, IAS = -2.8A.
Â
Surface mounted on FR-4 board, t ⤠10sec.
 ISD ⤠-2.8A, di/dt ⤠150A/µs, VDD ⤠V(BR)DSS,
TJ ⤠150°C
 Pulse width ⤠300µs; duty cycle ⤠2%.
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