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IRF7306TRPBF Datasheet, PDF (2/9 Pages) International Rectifier – Generation V Technology | |||
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IRF7306
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient
RDS(ON)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD
Internal Drain Inductance
LS
Ciss
Coss
Crss
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
-30 âââ âââ
âââ -0.037 âââ
âââ âââ 0.10
âââ âââ 0.16
V
V/°C
â¦
VGS = 0V, ID = -250µA
Reference to 25°C, ID = -1mA
VGS = -10V, ID = -1.8A Â
VGS = -4.5V, ID = -1.5A Â
-1.0 âââ âââ V VDS = VGS, ID = -250µA
2.5 âââ âââ S VDS = -24V, ID = -1.8A
âââ âââ -1.0 µA VDS = -24V, VGS = 0V
âââ âââ -25
VDS = -24V, VGS = 0V, TJ = 125°C
âââ âââ -100 nA VGS = -20V
âââ âââ 100
VGS = 20V
âââ âââ 25
ID = -1.8A
âââ âââ 2.9 nC VDS = -24V
âââ âââ 9.0
VGS = -10V, See Fig. 6 and 12 Â
âââ 11 âââ
VDD = -15V
âââ 17 âââ ns ID = -1.8A
âââ 25 âââ
RG = 6.0â¦
âââ 18 âââ
RD = 8.2â¦, See Fig. 10 Â
D
âââ 4.0 âââ
nH Between lead tip
and center of die contact G
âââ 6.0 âââ
S
âââ 440 âââ
âââ 200 âââ
âââ 93 âââ
VGS = 0V
pF VDS = -25V
Æ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) Â
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
âââ âââ -2.5
âââ âââ -14
âââ âââ -1.0
âââ 53 80
âââ 66 99
MOSFET symbol
D
showing the
A
integral reverse
G
p-n junction diode.
S
V TJ = 25°C, IS = -1.8A, VGS = 0V Â
ns TJ = 25°C, IF = -1.8A
µC di/dt = 100A/µs Â
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
 ISD ⤠-1.8A, di/dt ⤠90A/µs, VDD ⤠V(BR)DSS,
TJ â¤150°C
 Pulse width ⤠300µs; duty cycle ⤠2%.
 Surface mounted on FR-4 board, t ⤠10sec.
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