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IRF7306PBF_15 Datasheet, PDF (2/9 Pages) International Rectifier – GENERATION V TECHNOLOGY | |||
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IRF7306PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient
RDS(ON)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD
Internal Drain Inductance
LS
Internal Source Inductance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
-30 ÂÂÂ ÂÂÂ
ÂÂÂ -0.037 ÂÂÂ
ÂÂÂ ÂÂÂ 0.10
ÂÂÂ ÂÂÂ 0.16
-1.0 ÂÂÂ ÂÂÂ
2.5 ÂÂÂ ÂÂÂ
ÂÂÂ ÂÂÂ -1.0
ÂÂÂ ÂÂÂ -25
ÂÂÂ ÂÂÂ -100
ÂÂÂ ÂÂÂ 100
ÂÂÂ ÂÂÂ 25
ÂÂÂ ÂÂÂ 2.9
ÂÂÂ ÂÂÂ 9.0
ÂÂÂ 11 ÂÂÂ
ÂÂÂ 17 ÂÂÂ
ÂÂÂ 25 ÂÂÂ
ÂÂÂ 18 ÂÂÂ
V
V/°C
â¦
V
S
µA
nA
nC
ns
VGS = 0V, ID = -250µA
Reference to 25°C, ID = -1mA
VGS = -10V, ID = -1.8A Â
VGS = -4.5V, ID = -1.5A Â
VDS = VGS, ID = -250µA
VDS = -24V, ID = -1.8A
VDS = -24V, VGS = 0V
VDS = -24V, VGS = 0V, TJ = 125°C
VGS = -20V
VGS = 20V
ID = -1.8A
VDS = -24V
VGS = -10V, See Fig. 6 and 12 Â
VDD = -15V
ID = -1.8A
RG = 6.0â¦
RD = 8.2â¦, See Fig. 10 Â
D
ÂÂÂ 4.0 ÂÂÂ
nH Between lead tip
and center of die contact G
ÂÂÂ 6.0 ÂÂÂ
S
ÂÂÂ 440 ÂÂÂ
ÂÂÂ 200 ÂÂÂ
ÂÂÂ 93 ÂÂÂ
VGS = 0V
pF VDS = -25V
 = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) Â
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
ÂÂÂ ÂÂÂ -2.5
ÂÂÂ ÂÂÂ -14
ÂÂÂ ÂÂÂ -1.0
ÂÂÂ 53 80
ÂÂÂ 66 99
MOSFET symbol
D
showing the
A
integral reverse
G
p-n junction diode.
S
V TJ = 25°C, IS = -1.8A, VGS = 0V Â
ns TJ = 25°C, IF = -1.8A
nC di/dt = 100A/µs Â
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
 ISD ⤠-1.8A, di/dt ⤠90A/µs, VDD ⤠V(BR)DSS,
TJ â¤150°C
 Pulse width ⤠300µs; duty cycle ⤠2%.
 Surface mounted on FR-4 board, t ⤠10sec.
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