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| IRF7233PBF Datasheet, PDF (2/7 Pages) International Rectifier – HEXFET Power MOSFET | |||
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IRF7233PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
-14 âââ âââ V VGS = 0V, ID = -5.0mA
V(BR)DSS Drain-to-Source Breakdown Voltage
-12 âââ âââ V VGS = 0V, ID = -250µA
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
âââ 0.001 âââ V/°C
âââ 0.013 0.020
 0.023 0.033 â¦
-0.6 âââ âââ V
Reference to 25°C, ID = -1mA
VGS = -4.5V, ID = -9.5A Â
VGS = -2.5V, ID = -6.0A Â
VDS = VGS, ID = -250µA
gfs
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
3.3 âââ âââ S VDS = -10V, ID = -9.5A
âââ âââ -10
VDS = -12V, VGS = 0V
âââ âââ -1.0 µA VDS = -9.6V, VGS = 0V
âââ âââ -100
VDS = -12V, VGS = 0V, TJ = 70°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
âââ âââ -100 nA VGS = -12V
âââ âââ 100
VGS = 12V
Qg
Qgs
Qgd
td(on)
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
âââ 49 74
ID = -9.5A
âââ 9.3 14 nC VDS = -10V
âââ 22 32
VGS = -5.0VÂ
âââ 26 âââ
VDD = -10V
tr
td(off)
tf
Rise Time
Turn-Off Delay Time
Fall Time
âââ 540 âââ
âââ 77 âââ
âââ 370 âââ
ID = -9.5A
ns RD = 1.0â¦
RG = 6.2⦠Â
Ciss
Input Capacitance
âââ 4530 6000
VGS = 0V
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
âââ 2400 âââ pF VDS = -10V
âââ 2220 âââ
Æ = 1.0kHz
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) Â
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
Min.
ÂÂÂ
ÂÂÂ
âââ
âââ
âââ
Typ.
ÂÂÂ
ÂÂÂ
âââ
43
35
Max.
-2.5
-76
-1.2
65
52
Units
A
V
ns
nC
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
TJ = 25°C, IS = -2.5A, VGS = 0V Â
TJ = 25°C, IF = -2.5A
di/dt = 100A/µs Â
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
 Pulse width ⤠300µs; duty cycle ⤠2%.
 When mounted on 1 inch square copper board, t<10 sec
 Starting TJ = 25°C, L = 1.3mH
RG = 25â¦, IAS = 9.5A.
2
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