IRF7204PBF_15 Datasheet, PDF (2/9 Pages) International Rectifier – ADVANCED PROCESS TECHNOLOGY

IRF7204PbF
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
V_(BR)DSS Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
R_DS(ON)
Static Drain-to-Source On-Resistance
V_GS(th)
g_fs
Gate Threshold Voltage
Forward Transconductance
I_DSS
Drain-to-Source Leakage Current
I_GSS
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
L_D
Internal Drain Inductance
L_S
Internal Source Inductance
C_iss
Input Capacitance
C_oss
Output Capacitance
C_rss
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
-20 ––– ––– V V_GS = 0V, I_D = -250µA
––– -0.022 ––– V/°C Reference to 25°C, I_D = -1mA
––– ––– 0.060 _Ω
––– ––– 0.10
V_GS = -10V, I_D = -5.3A ƒ
V_GS = -4.5V, I_D = -2.0A ƒ
-1.0 ––– -2.5 V V_DS = V_GS, I_D = -250µA
––– 7.9 ––– S V_DS = -15V, I_D = -5.3A ƒ
––– ––– -25 _µA V_DS = -16V, V_GS = 0V
––– ––– -250
V_DS = -16V, V_GS = 0V, T_J = 125 °C
––– ––– -100 _nA V_GS = -12V
––– ––– 100
V_GS = 12V
––– 25 –––
I_D = -5.3A
––– 5.0 ––– nC V_DS = -10V
––– 8.0 –––
V_GS = -10V ƒ
––– 14 30
V_DD = -10V
––– 26 60 _ns I_D = -1.0A
––– 100 150
R_G = 6.0Ω
––– 68 100
R_D = 10Ω ƒ
D
––– 2.5 –––
nH ^{Between lead,6mm(0.25in.)}
from package and center ^G
––– 4.0 –––
of die contact
S
––– 860 –––
V_GS = 0V
––– 750 ––– pF V_DS = -10V
––– 230 –––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
I_S
Continuous Source Current
(Body Diode)
I_SM
Pulsed Source Current
(Body Diode) 
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse RecoveryCharge
t_on
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– -2.5
––– ––– -15
––– ––– -1.2
––– 85 100
––– 77 120
MOSFET symbol
D
showing the
A
integral reverse
G
p-n junction diode.
S
V T_J = 25°C, I_S = -1.25A, V_GS = 0V ƒ
ns T_J = 25°C, I_F = -2.4A
nC di/dt = 100A/µs ƒ
Intrinsic turn-on time is negligible (turn-on is dominated by L_S+L_D)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ I_SD ≤ -5.3A, di/dt ≤ 90A/µs, V_DD ≤ V_(BR)DSS,
T_J ≤ 150°C
ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%.
„ Surface mounted on FR-4 board, t ≤ 10sec.