IRF7105PBF-1_15 Datasheet, PDF (2/10 Pages) International Rectifier – Industry-standard pinout SO-8 Package

IRF7105TRPbF-1
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
V_(BR)DSS
Parameter
Drain-to-Source Breakdown Voltage
ΔV_(BR)DSS/ΔT_J Breakdown Voltage Temp. Coefficient
R_DS(ON)
Static Drain-to-Source On-Resistance
V_GS(th)
g_fs
Gate Threshold Voltage
Forward Transconductance
I_DSS
I_GSS
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
LD
LS
C_iss
C_oss
C_rss
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Total GateCharge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductace
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
N-Ch 25 — —
P-Ch -25 — —
V
N-Ch
P-Ch
— 0.030 —
— -0.015 —
V/°C
N-Ch
—
—
0.083 0.10
0.14 0.16
P-Ch
—
—
0.16 0.25
0.30 0.40
Ω
N-Ch 1.0 — 3.0
P-Ch -1.0 — -3.0
V
N-Ch — 4.3 —
P-Ch — 3.1 —
S
N-Ch — — 2.0
P-Ch —
N-Ch —
—
—
-2.0
25
µA
P-Ch — — -25
N-P –– — ±100
N-Ch — 9.4 27
P-Ch — 10 25
N-Ch —
P-Ch —
1.7
1.9
—
—
nC
N-Ch — 3.1 —
P-Ch — 2.8 —
N-Ch — 7.0 20
P-Ch — 12 40
N-Ch — 9.0 20
P-Ch —
N-Ch —
13
45
40
90
ns
P-Ch — 45 90
N-Ch — 25 50
P-Ch — 37 50
N-P —
N-P —
4.0
6.0
—
—
nH
N-Ch — 330 —
P-Ch — 290 —
N-Ch — 250 —
P-Ch — 210 —
pF
N-Ch — 61 —
P-Ch — 67 —
Conditions
VGS = 0V, ID = 250µA
VGS = 0V, ID = -250µA
Reference to 25°C, ID = 1mA
Reference to 25°C, ID = -1mA
V_GS = 10V, I_D = 1.0A ƒ
VGS = 4.5V, ID = 0.50A ƒ
V_GS = -10V, I_D = -1.0A ƒ
VGS = -4.5V, ID = -0.50A ƒ
VDS = VGS, ID = 250µA
V_DS = V_GS, I_D = -250µA
VDS = 15V, ID = 3.5A ƒ
V_DS = -15V, I_D = -3.5A ƒ
VDS = 20V, VGS = 0V
VDS = -20V, VGS = 0V,
VDS = 20V, VGS = 0V, TJ = 55°C
VDS = -20V, VGS = 0V, TJ = 55°C
V_GS = ± 20V
N-Channel
I_D = 2.3A, V_DS = 12.5V, V_GS = 10V
ƒ
P-Channel
I_D = -2.3A, V_DS = -12.5V, V_GS = -10V
N-Channel
V_DD = 25V, I_D = 1.0A, R_G = 6.0Ω,
R_D = 25Ω
ƒ
P-Channel
V_DD = -25V, I_D = -1.0A, R_G = 6.0Ω,
R_D = 25Ω
Between lead , 6mm (0.25in.)from
package and center of die contact
N-Channel
V_GS = 0V, V_DS = 15V, ƒ = 1.0MHz
P-Channel
V_GS = 0V, V_DS = -15V, ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
N-Ch — — 2.0
I_S
Continuous Source Current (Body Diode)
P-Ch — — -2.0 _A
N-Ch — — 14
I_SM
Pulsed Source Current (Body Diode) 
P-Ch — — -9.2
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
ton
Forward Turn-On Time
N-Ch — — 1.2 _V
P-Ch — — -1.2
T_J = 25°C, I_S = 1.3A, V_GS = 0V ƒ
TJ = 25°C, IS = -1.3A, VGS = 0V ƒ
N-Ch — 36 54 _{ns N-Channel}
P-Ch — 69 100
T_J = 25°C, I_F = 1.3A, di/dt = 100A/µs
N-Ch —
P-Ch —
41 75 _nC
90 180
P-Channel
ƒ
T_J = 25°C, I_F = -1.3A, di/dt = 100A/µs
N-P Intrinsic turn-on time is neglegible (turn-on is dominated by L_S+L_D)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ N-Channel I_SD ≤ 3.5A, di/dt ≤ 90A/µs, V_DD ≤ V_(BR)DSS, T_J ≤ 150°C
P-Channel I_SD ≤ -2.3A, di/dt ≤ 90A/µs, V_DD ≤ V_(BR)DSS, T_J ≤ 150°C
ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%.
„ Surface mounted on FR-4 board, t ≤ 10sec.
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October 16, 2014