IRF7103PBF_15 Datasheet, PDF (2/9 Pages) International Rectifier – ADVANCED PROCESS TECHNOLOGY

IRF7103PbF
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)DSS Drain-to-Source Breakdown Voltage
50 ––– ––– V V_GS = 0V, I_D = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
R_DS(ON)
Static Drain-to-Source On-Resistance
––– 0.049 –––
––– 0.11 0.13
––– 0.16 0.20
V/°C
Ω
Reference to 25°C, I_D = 1mA
V_GS = 10V, I_D = 3.0A ƒ
V_GS = 4.5V, I_D = 1.5A ƒ
V_GS(th)
Gate Threshold Voltage
1.0 ––– 3.0 V V_DS = V_GS, I_D = 250µA
g_fs
Forward Transconductance
I_DSS
Drain-to-Source Leakage Current
––– 3.8 ––– S V_DS = 15V, I_D = 3.0A ƒ
––– ––– 2.0 _µA V_DS = 40V, V_GS = 0V
––– ––– 25
V_DS = 40V, V_GS = 0V, T_J = 55 °C
I_GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– 100 _nA V_GS = 20V
––– ––– -100
V_GS = - 20V
Q_g
Total Gate Charge
––– 12 30
I_D = 2.0A
Q_gs
Gate-to-Source Charge
––– 1.2 ––– nC V_DS = 25V
Q_gd
Gate-to-Drain ("Miller") Charge
––– 3.5 –––
V_GS = 10V ƒ
t_d(on)
t_r
t_d(off)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
––– 9.0 20
––– 8.0 20
––– 45 70
V_DD = 25V
ns ^{ID = 1.0A}
R_G = 6.0Ω
t_f
Fall Time
––– 25 50
R_D = 25Ω ƒ
L_D
Internal Drain Inductance
L_S
Internal Source Inductance
D
––– 4.0 –––
nH ^{Between lead,6mm(0.25in.)}
from package and center ^G
––– 6.0 –––
of die contact
S
C_iss
Input Capacitance
C_oss
Output Capacitance
––– 290 –––
V_GS = 0V
––– 140 ––– pF V_DS = 25V
C_rss
Reverse Transfer Capacitance
––– 37 –––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
I_S
Continuous Source Current
(Body Diode)
I_SM
Pulsed Source Current
(Body Diode) 
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse RecoveryCharge
t_on
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– 2.0
showing the
A _{integral reverse}
G
––– ––– 12
p-n junction diode.
S
––– ––– 1.2
––– 70 100
––– 110 170
V T_J = 25°C, I_S = 1.5A, V_GS = 0V ƒ
ns T_J = 25°C, I_F = 1.5A
nC di/dt = 100A/µs ƒ
Intrinsic turn-on time is negligible (turn-on is dominated by L_S+L_D)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ I_SD ≤ 1.8A, di/dt ≤ 90A/µs, V_DD ≤ V_(BR)DSS,
T_J ≤ 150°C
ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%.
„ Surface mounted on FR-4 board, t ≤ 10sec.