IRF6726MPBF_15 Datasheet, PDF (2/9 Pages) International Rectifier – RoHS Compliant Containing No Lead and Bromide

IRF6726MPbF
Static @ T_J = 25°C (unless otherwise specified)
Parameter
Min.
BV_DSS
∆ΒV_DSS/∆T_J
R_DS(on)
Drain-to-Source Breakdown Voltage
30
Breakdown Voltage Temp. Coefficient –––
Static Drain-to-Source On-Resistance –––
–––
V_GS(th)
∆V_GS(th)/∆T_J
I_DSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
1.35
–––
–––
–––
I_GSS
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
gfs
Forward Transconductance
150
Q_g
Total Gate Charge
–––
Q_gs1
Pre-Vth Gate-to-Source Charge
–––
Q_gs2
Post-Vth Gate-to-Source Charge
–––
Q_gd
Gate-to-Drain Charge
–––
Q_godr
Gate Charge Overdrive
–––
Q_sw
Switch Charge (Q_gs2 + Q_gd)
–––
Q_oss
Output Charge
–––
R_G
Gate Resistance
–––
t_d(on)
Turn-On Delay Time
–––
t_r
Rise Time
–––
t_d(off)
Turn-Off Delay Time
–––
t_f
Fall Time
–––
C_iss
Input Capacitance
–––
C_oss
Output Capacitance
–––
C_rss
Reverse Transfer Capacitance
–––
Diode Characteristics
Parameter
Min.
I_S
Continuous Source Current
–––
(Body Diode)
I_SM
Pulsed Source Current
Ãg (Body Diode)
–––
V_SD
Diode Forward Voltage
–––
t_rr
Reverse Recovery Time
–––
Q_rr
Reverse Recovery Charge
–––
Typ.
–––
21
1.3
1.9
1.7
-6.0
–––
–––
–––
–––
–––
51
12
5.4
16
18
21
28
1.0
20
30
25
17
6140
1270
590
Typ.
–––
–––
0.77
27
45
Max. Units
Conditions
–––
–––
1.7
2.4
2.35
V VGS = 0V, ID = 250µA
mV/°C ^{Reference to 25°C, I}D ^{= 1mA}
i _mΩ V_GS = 10V, I_D = 32A
i V_GS = 4.5V, I_D = 25A
V VDS = VGS, ID = 150µA
––– mV/°C
1.0
150
100
-100
–––
µA VDS = 24V, VGS = 0V
V_DS = 24V, V_GS = 0V, T_J = 125°C
nA VGS = 20V
V_GS = -20V
S VDS = 15V, ID = 25A
77
–––
V_DS = 15V
––– nC ^VGS ^{= 4.5V}
–––
I_D = 25A
–––
See Fig. 15
–––
––– nC ^VDS ^{= 16V, V}GS ^{= 0V}
1.8
–––
Ãi Ω
V_DD = 15V, V_GS = 4.5V
––– ns ID = 25A
–––
R_G = 1.8Ω
–––
See Fig. 17
–––
V_GS = 0V
––– pF VDS = 15V
–––
ƒ = 1.0MHz
Max. Units
Conditions
110
MOSFET symbol
A showing the
250
integral reverse
1.0
i ^{p-n junction diode.}
V TJ = 25°C, IS = 25A, VGS = 0V
41
68
i ^{ns TJ = 25°C, IF = 25A}
nC di/dt = 500A/µs
Notes:
‡ Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
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