IRF6722S1PBF Datasheet, PDF (2/9 Pages) International Rectifier – RoHS Compliant Containing No Lead and Bromide

IRF6722SPbF
Static @ T_J = 25°C (unless otherwise specified)
Parameter
Min.
BV_DSS
∆ΒV_DSS/∆T_J
R_DS(on)
Drain-to-Source Breakdown Voltage
30
Breakdown Voltage Temp. Coefficient –––
Static Drain-to-Source On-Resistance –––
–––
V_GS(th)
Gate Threshold Voltage
1.4
∆V_GS(th)/∆T_J
Gate Threshold Voltage Coefficient
–––
I_DSS
Drain-to-Source Leakage Current
–––
–––
I_GSS
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
gfs
Forward Transconductance
23
Q_g
Total Gate Charge
–––
Q_gs1
Pre-Vth Gate-to-Source Charge
–––
Q_gs2
Post-Vth Gate-to-Source Charge
–––
Q_gd
Gate-to-Drain Charge
–––
Q_godr
Gate Charge Overdrive
–––
Q_sw
Switch Charge (Q_gs2 + Q_gd)
–––
Q_oss
Output Charge
–––
R_G
Gate Resistance
–––
t_d(on)
Turn-On Delay Time
–––
t_r
Rise Time
–––
t_d(off)
Turn-Off Delay Time
–––
t_f
Fall Time
–––
C_iss
Input Capacitance
–––
C_oss
Output Capacitance
–––
C_rss
Reverse Transfer Capacitance
–––
Diode Characteristics
Parameter
Min.
I_S
Continuous Source Current
–––
(Body Diode)
I_SM
Pulsed Source Current
Ãg (Body Diode)
–––
V_SD
Diode Forward Voltage
–––
t_rr
Reverse Recovery Time
–––
Q_rr
Reverse Recovery Charge
–––
Typ.
–––
22
4.7
8.0
1.9
-6.0
–––
–––
–––
–––
–––
11
2.5
1.2
4.1
3.0
5.3
11
1.4
7.7
11
8.5
5.7
1320
490
150
Typ.
–––
–––
0.80
21
30
Max. Units
Conditions
–––
–––
7.3
10.3
2.4
V ^VGS ^{= 0V, I}D ^{= 250µA}
mV/°C Reference to 25°C, ID = 1mA
i _mΩ V_GS = 10V, I_D = 13A
i V_GS = 4.5V, I_D = 11A
V ^VDS ^{= V}GS^{, I}D ^{= 50µA}
––– mV/°C
1.0
150
100
-100
–––
µA ^VDS ^{= 24V, V}GS ^{= 0V}
V_DS = 24V, V_GS = 0V, T_J = 125°C
nA ^VGS ^{= 20V}
V_GS = -20V
S ^VDS ^{= 15V, I}D ^{= 11A}
17
–––
V_DS = 15V
––– nC VGS = 4.5V
–––
I_D = 11A
–––
See Fig. 15
–––
––– nC VDS = 16V, VGS = 0V
2.5
–––
Ãi Ω
V_DD = 15V, V_GS = 4.5V
––– ns ^ID ^{= 11A}
–––
R_G = 1.8Ω
–––
See Fig. 17
–––
V_GS = 0V
––– pF ^VDS ^{= 15V}
–––
ƒ = 1.0MHz
Max. Units
Conditions
52
MOSFET symbol
A showing the
110
integral reverse
1.0
i ^{p-n junction diode.}
V ^TJ ^{= 25°C, I}S ^{= 11A, V}GS ^{= 0V}
32
45
i ^{ns TJ = 25°C, IF = 11A}
nC di/dt = 500A/µs
Notes:
‡ Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
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