IRF6715MPBF Datasheet, PDF (2/9 Pages) International Rectifier – DirectFET Power MOSFET

IRF6715MPbF
Static @ T_J = 25°C (unless otherwise specified)
Parameter
Min.
BV_DSS
∆ΒV_DSS/∆T_J
R_DS(on)
Drain-to-Source Breakdown Voltage
25
Breakdown Voltage Temp. Coefficient –––
Static Drain-to-Source On-Resistance –––
–––
V_GS(th)
Gate Threshold Voltage
1.4
∆V_GS(th)/∆T_J
Gate Threshold Voltage Coefficient
–––
I_DSS
Drain-to-Source Leakage Current
–––
–––
I_GSS
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
gfs
Forward Transconductance
135
Q_g
Total Gate Charge
–––
Q_gs1
Pre-Vth Gate-to-Source Charge
–––
Q_gs2
Post-Vth Gate-to-Source Charge
–––
Q_gd
Gate-to-Drain Charge
–––
Q_godr
Gate Charge Overdrive
–––
Q_sw
Switch Charge (Q_gs2 + Q_gd)
–––
Q_oss
Output Charge
–––
R_G
Gate Resistance
–––
t_d(on)
Turn-On Delay Time
–––
t_r
Rise Time
–––
t_d(off)
Turn-Off Delay Time
–––
t_f
Fall Time
–––
C_iss
Input Capacitance
–––
C_oss
Output Capacitance
–––
C_rss
Reverse Transfer Capacitance
–––
Diode Characteristics
Parameter
Min.
I_S
Continuous Source Current
–––
(Body Diode)
I_SM
Ãg ^{Pulsed Source Current}
(Body Diode)
–––
V_SD
Diode Forward Voltage
–––
t_rr
Reverse Recovery Time
–––
Q_rr
Reverse Recovery Charge
–––
Typ.
–––
17
1.3
2.1
1.9
-6.2
–––
–––
–––
–––
–––
40
12
5.3
12
11
17
26
1.1
20
31
16
12
5340
1280
600
Typ.
–––
–––
–––
28
37
Max. Units
Conditions
––– V ^VGS ^{= 0V, I}D ^{= 250µA}
–––
1.6
2.7
mV/°C Reference to 25°C, ID = 1mA
i _mΩ V_GS = 10V, I_D = 34A
i V_GS = 4.5V, I_D = 27A
2.4
–––
V
mV/°C
V_DS
=
V_GS,
I_D
=
100µA
1.0
150
100
-100
–––
µA ^VDS ^{= 20V, V}GS ^{= 0V}
V_DS = 20V, V_GS = 0V, T_J = 125°C
nA ^VGS ^{= 20V}
V_GS = -20V
S ^VDS ^{= 13V, I}D ^{= 27A}
59
–––
V_DS = 13V
––– nC VGS = 4.5V
–––
I_D = 27A
–––
See Fig. 15
–––
––– nC VDS = 16V, VGS = 0V
2.0
–––
Ãi Ω
V_DD = 13V, V_GS = 4.5V
––– ns ^ID ^{= 27A}
–––
R_G = 1.8Ω
–––
See Fig. 17
–––
V_GS = 0V
––– pF ^VDS ^{= 13V}
–––
ƒ = 1.0MHz
Max. Units
Conditions
MOSFET symbol
98
showing the
A
integral reverse
270
1.0
i ^{p-n junction diode.}
V ^TJ ^{= 25°C, I}S ^{= 27A, V}GS ^{= 0V}
42
56
i ^{ns TJ = 25°C, IF = 27A}
nC di/dt = 200A/µs
Notes:
‡ Pulse width ≤ 400µs; duty cycle ≤ 2%
2
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