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| IRF6635PBF Datasheet, PDF (2/9 Pages) International Rectifier – DirectFET Power MOSFET | |||
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IRF6635PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
BVDSS
âÎVDSS/âTJ
RDS(on)
Drain-to-Source Breakdown Voltage
30
Breakdown Voltage Temp. Coefficient âââ
Static Drain-to-Source On-Resistance âââ
âââ
VGS(th)
âVGS(th)/âTJ
IDSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
1.35
âââ
âââ
âââ
IGSS
Gate-to-Source Forward Leakage
âââ
Gate-to-Source Reverse Leakage
âââ
gfs
Forward Transconductance
45
Qg
Total Gate Charge
âââ
Qgs1
Pre-Vth Gate-to-Source Charge
âââ
Qgs2
Post-Vth Gate-to-Source Charge
âââ
Qgd
Gate-to-Drain Charge
âââ
Qgodr
Gate Charge Overdrive
âââ
Qsw
Switch Charge (Qgs2 + Qgd)
âââ
Qoss
Output Charge
âââ
RG
Gate Resistance
âââ
td(on)
Turn-On Delay Time
âââ
tr
Rise Time
âââ
td(off)
Turn-Off Delay Time
âââ
tf
Fall Time
âââ
Ciss
Input Capacitance
âââ
Coss
Output Capacitance
âââ
Crss
Reverse Transfer Capacitance
âââ
Diode Characteristics
Parameter
Min.
IS
Continuous Source Current
âââ
(Body Diode)
ISM
Pulsed Source Current
âââ
(Body Diode) g
VSD
Diode Forward Voltage
âââ
trr
Reverse Recovery Time
âââ
Qrr
Reverse Recovery Charge
âââ
Typ.
âââ
24
1.3
1.8
1.8
-6.1
âââ
âââ
âââ
âââ
âââ
47
12
4.7
17
13
22
29
1.0
21
13
33
8.3
5970
1280
600
Typ.
âââ
âââ
âââ
20
48
Max. Units
Conditions
âââ
âââ
1.8
2.4
2.35
V VGS = 0V, ID = 250µA
mV/°C Reference to 25°C, ID = 1mA
m⦠VGS = 10V, ID = 32A i
VGS = 4.5V, ID = 25A i
V VDS = VGS, ID = 250µA
âââ mV/°C
1.0
150
100
-100
âââ
µA VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
S VDS = 15V, ID = 25A
71
âââ
VDS = 15V
âââ nC VGS = 4.5V
ID = 25A
âââ
See Fig. 15
âââ
âââ nC VDS = 16V, VGS = 0V
âââ â¦
âââ
VDD = 16V, VGS = 4.5V i
âââ
ID = 25A
âââ ns Clamped Inductive Load
âââ
See Fig. 16 & 17
âââ
VGS = 0V
âââ pF VDS = 15V
âââ
Æ = 1.0MHz
Max. Units
Conditions
110
MOSFET symbol
A showing the
250
integral reverse
p-n junction diode.
1.0
V TJ = 25°C, IS = 25A, VGS = 0V i
30 ns TJ = 25°C, IF = 25A
72 nC di/dt = 500A/µs i See Fig. 18
Notes:
Â
Repetitive rating; pulse width limited by max. junction temperature.
 Pulse width ⤠400µs; duty cycle ⤠2%.
2
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