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| IRF6623TR1PBF Datasheet, PDF (2/9 Pages) International Rectifier – Ideal for CPU Core DC-DC Converters | |||
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IRF6623PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
BVDSS
âÎVDSS/âTJ
RDS(on)
Drain-to-Source Breakdown Voltage
20
Breakdown Voltage Temp. Coefficient âââ
Static Drain-to-Source On-Resistance âââ
âââ
VGS(th)
Gate Threshold Voltage
1.4
âVGS(th)/âTJ
Gate Threshold Voltage Coefficient
âââ
IDSS
Drain-to-Source Leakage Current
âââ
âââ
IGSS
Gate-to-Source Forward Leakage
âââ
Gate-to-Source Reverse Leakage
âââ
gfs
Forward Transconductance
34
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Total Gate Charge
âââ
Pre-Vth Gate-to-Source Charge
âââ
Post-Vth Gate-to-Source Charge
âââ
Gate-to-Drain Charge
âââ
Gate Charge Overdrive
âââ
Switch Charge (Qgs2 + Qgd)
âââ
Output Charge
âââ
Turn-On Delay Time
âââ
Rise Time
âââ
Turn-Off Delay Time
âââ
Fall Time
âââ
Input Capacitance
âââ
Output Capacitance
âââ
Reverse Transfer Capacitance
âââ
Typ.
âââ
15
4.4
7.5
âââ
-5.4
âââ
âââ
âââ
âââ
âââ
11
3.3
1.2
4.0
2.5
5.2
8.9
9.7
40
12
4.5
1360
630
240
Max. Units
Conditions
âââ V VGS = 0V, ID = 250µA
âââ mV/°C Reference to 25°C, ID = 1mA
5.7 m⦠VGS = 10V, ID = 15A e
9.7
VGS = 4.5V, ID = 12A e
2.2
V VDS = VGS, ID = 250µA
âââ mV/°C
1.0
150
100
-100
âââ
17
µA VDS = 16V, VGS = 0V
VDS = 16V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
S VDS = 10V, ID = 12A
âââ
VDS = 10V
âââ nC VGS = 4.5V
âââ
ID = 12A
âââ
See Fig. 16
âââ
âââ nC VDS = 10V, VGS = 0V
âââ
VDD = 16V, VGS = 4.5V e
âââ
ID = 12A
âââ ns Clamped Inductive Load
âââ
âââ
VGS = 0V
âââ pF VDS = 10V
âââ
Æ = 1.0MHz
Diode Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) c
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Min.
âââ
âââ
âââ
âââ
âââ
Typ.
âââ
âââ
0.81
20
12
Max. Units
Conditions
53
MOSFET symbol
D
A showing the
120
integral reverse
G
p-n junction diode.
S
1.0
V TJ = 25°C, IS = 12A, VGS = 0V e
30 ns TJ = 25°C, IF = 12A
18 nC di/dt = 100A/µs e
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
 Starting TJ = 25°C, L = 0.61mH,
RG = 25â¦, IAS = 12A.
 Pulse width ⤠400µs; duty cycle ⤠2%.
 Surface mounted on 1 in. square Cu board.
Â
Used double sided cooling, mounting pad.
 Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
 TC measured with thermal couple mounted to top (Drain) of
part.
 Rθ is measured at TJ of approximately 90°C.
 Click on this section to link to the appropriate technical paper.
 Click on this section to link to the DirectFET Website.
2
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