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| IRF6216PBF_15 Datasheet, PDF (2/8 Pages) International Rectifier – Reset Switch for Active Clamp Reset DC-DC converters | |||
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IRF6216PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
IGSS
Gate-to-Source Reverse Leakage
-150
âââ
âââ
-3.0
âââ
âââ
âââ
âââ
âââ âââ
-0.17 âââ
âââ 0.240
âââ -5.0
âââ -25
âââ -250
âââ -100
âââ 100
V VGS = 0V, ID = -250µA
V/°C Reference to 25°C, ID = -1mA Â
⦠VGS = -10V, ID = -1.3A Â
V VDS = VGS, ID = -250µA
µA VDS = -150V, VGS = 0V
VDS = -120V, VGS = 0V, TJ = 125°C
nA VGS = -20V
VGS = 20V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
2.7 âââ âââ S VDS = -50V, ID = -1.3A
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
âââ 33 49
âââ 7.2 11
ID = -1.3A
nC VDS = -120V
Qgd
td(on)
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
âââ 15 23
âââ 18 âââ
VGS = -10V,
VDD = -75V
tr
td(off)
tf
Ciss
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
âââ 15 âââ ns ID = -1.3A
âââ 33 âââ
RG = 6.5â¦
âââ 26 âââ
VGS = -10V Â
âââ 1280 âââ
VGS = 0V
Coss
Crss
Output Capacitance
Reverse Transfer Capacitance
âââ 220 âââ
VDS = -25V
âââ 53 âââ pF Æ = 1.0MHz
Coss
Coss
Output Capacitance
Output Capacitance
âââ 1290 âââ
âââ 99 âââ
VGS = 0V, VDS = -1.0V, Æ = 1.0MHz
VGS = 0V, VDS = -120V, Æ = 1.0MHz
Coss eff. Effective Output Capacitance
âââ 220 âââ
VGS = 0V, VDS = 0V to -120V
Avalanche Characteristics
Parameter
EAS
Single Pulse Avalanche EnergyÂ
IAR
Avalanche CurrentÂ
Typ.
âââ
âââ
Max.
200
-4.0
Units
mJ
A
Diode Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) Â
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
2
Min.
âââ
âââ
âââ
âââ
âââ
Typ.
âââ
âââ
âââ
80
310
Max.
-2.2
-19
-1.6
120
460
Units
A
V
nS
nC
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
TJ = 25°C, IS = -1.3A, VGS = 0V Â
TJ = 25°C, IF = -1.3A
di/dt = -100A/µs Â
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