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| IRF5802TRPBF Datasheet, PDF (2/8 Pages) International Rectifier – SMPS MOSFET | |||
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IRF5802PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
IGSS
Gate-to-Source Reverse Leakage
150
âââ
âââ
3.0
âââ
âââ
âââ
âââ
âââ
0.19
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
1.2
5.5
25
250
100
-100
V
V/°C
â¦
V
µA
nA
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA Â
VGS = 10V, ID = 0.54A Â
VDS = VGS, ID = 250µA
VDS = 150V, VGS = 0V
VDS = 120V, VGS = 0V, TJ = 125°C
VGS = 30V
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
gfs
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
0.55 âââ âââ S VDS = 50V, ID = 0.54A
âââ 4.5 6.8
ID = 0.54A
âââ 1.0 1.5 nC VDS = 120V
âââ 2.4 3.6
VGS = 10V,
âââ 6.0 âââ
VDD = 75V
âââ 1.6 âââ ns ID = 0.54A
âââ 7.5 âââ
RG = 6.0â¦
âââ 9.2 âââ
VGS = 10V Â
âââ 88 âââ
VGS = 0V
âââ 26 âââ
VDS = 25V
âââ 7.7 âââ pF Æ = 1.0MHz
âââ 110 âââ
VGS = 0V, VDS = 1.0V, Æ = 1.0MHz
âââ 14 âââ
âââ 3.0 âââ
VGS = 0V, VDS = 120V, Æ = 1.0MHz
VGS = 0V, VDS = 0V to 120V Â
Avalanche Characteristics
Parameter
EAS
Single Pulse Avalanche EnergyÂ
IAR
Avalanche CurrentÂ
Typ.
âââ
âââ
Max.
9.5
0.9
Units
mJ
A
Diode Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) Â
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
2
Min.
âââ
âââ
âââ
âââ
âââ
Typ.
âââ
âââ
âââ
46
55
Max.
1.8
18
1.3
69
83
Units
A
V
ns
nC
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
TJ = 25°C, IS = 0.54A, VGS = 0V Â
TJ = 25°C, IF = 0.54A
di/dt = 100A/µs Â
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