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IRF5210STRR Datasheet, PDF (2/11 Pages) International Rectifier – Advanced Process Technology
IRF5210S/L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
-100 ––– –––
––– -0.11 –––
––– ––– 0.06
V
V/°C
Ω
VGS = 0V, ID = -250µA
Reference to 25°C, ID = -1mA…
VGS = -10V, ID = -24A „
-2.0 ––– -4.0 V VDS = VGS, ID = -250µA
10 ––– ––– S VDS = -50V, ID = -21A…
––– ––– -25 µ A VDS = -100V, VGS = 0V
––– ––– -250
VDS = -80V, VGS = 0V, TJ = 150°C
––– ––– 100 nA VGS = 20V
––– ––– -100
VGS = -20V
––– ––– 180
––– ––– 25
––– ––– 97
––– 17 –––
ID = -21A
nC VDS = -80V
VGS = -10V, See Fig. 6 and 13 „…
VDD = -50V
––– 86 ––– ns ID = -21A
––– 79 –––
RG = 2.5Ω
––– 81 –––
RD = 2.4Ω, See Fig. 10 „
–––
7.5 –––
nH
Between lead,
and center of die contact
––– 2700 –––
VGS = 0V
––– 790 ––– pF VDS = -25V
––– 450 –––
ƒ = 1.0MHz, See Fig. 5…
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) 
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– -40 A showing the
integral reverse
G
––– ––– -140
p-n junction diode.
S
––– ––– -1.6 V TJ = 25°C, IS = -24A, VGS = 0V „
––– 170 260 ns TJ = 25°C, IF = -21A
––– 1.2 1.8 µC di/dt = -100A/µs „…
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
‚ Starting TJ = 25°C, L = 3.1mH
RG = 25Ω, IAS = -21A. (See Figure 12)
… Uses IRF5210 data and test conditions
ƒ ISD ≤ -21A, di/dt ≤ -480A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.