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IRF5210STRR Datasheet, PDF (2/11 Pages) International Rectifier – Advanced Process Technology | |||
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IRF5210S/L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
-100 âââ âââ
âââ -0.11 âââ
âââ âââ 0.06
V
V/°C
â¦
VGS = 0V, ID = -250µA
Reference to 25°C, ID = -1mAÂ
VGS = -10V, ID = -24A Â
-2.0 âââ -4.0 V VDS = VGS, ID = -250µA
10 âââ âââ S VDS = -50V, ID = -21AÂ
âââ âââ -25 µ A VDS = -100V, VGS = 0V
âââ âââ -250
VDS = -80V, VGS = 0V, TJ = 150°C
âââ âââ 100 nA VGS = 20V
âââ âââ -100
VGS = -20V
âââ âââ 180
âââ âââ 25
âââ âââ 97
âââ 17 âââ
ID = -21A
nC VDS = -80V
VGS = -10V, See Fig. 6 and 13 ÂÂ
VDD = -50V
âââ 86 âââ ns ID = -21A
âââ 79 âââ
RG = 2.5â¦
âââ 81 âââ
RD = 2.4â¦, See Fig. 10 Â
âââ
7.5 âââ
nH
Between lead,
and center of die contact
âââ 2700 âââ
VGS = 0V
âââ 790 âââ pF VDS = -25V
âââ 450 âââ
Æ = 1.0MHz, See Fig. 5Â
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) Â
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
âââ âââ -40 A showing the
integral reverse
G
âââ âââ -140
p-n junction diode.
S
âââ âââ -1.6 V TJ = 25°C, IS = -24A, VGS = 0V Â
âââ 170 260 ns TJ = 25°C, IF = -21A
âââ 1.2 1.8 µC di/dt = -100A/µs ÂÂ
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
 Pulse width ⤠300µs; duty cycle ⤠2%.
 Starting TJ = 25°C, L = 3.1mH
RG = 25â¦, IAS = -21A. (See Figure 12)
Â
Uses IRF5210 data and test conditions
 ISD ⤠-21A, di/dt ⤠-480A/µs, VDD ⤠V(BR)DSS,
TJ ⤠175°C
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
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