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IRF520VSPBF Datasheet, PDF (2/11 Pages) International Rectifier – HEXFET Power MOSFET | |||
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IRF520VS/LPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
âV(BR)DSS/âTJ
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD
Internal Drain Inductance
LS
Internal Source Inductance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
EAS
Single Pulse Avalanche EnergyÂÂ
Min. Typ. Max. Units
Conditions
100 âââ âââ V VGS = 0V, ID = 250µA
âââ 0.12 âââ V/°C Reference to 25°C, ID = 1mA Â
âââ âââ 0.165 ⦠VGS = 10V, ID = 5.5A Â
2.0 âââ 4.0 V VDS = VGS, ID = 250µA
1.9 âââ âââ S VDS = 50V, ID = 5.5AÂÂ
âââ âââ 25 µA VDS = 100V, VGS = 0V
âââ âââ 250
VDS = 80V, VGS = 0V, TJ = 150°C
âââ âââ 100 nA VGS = 20V
âââ âââ -100
VGS = -20V
âââ âââ 22
ID = 9.2A
âââ âââ 5.2
âââ âââ 7.0
nC VDS = 80V
VGS = 10V, See Fig. 6 and 13Â
âââ 6.9 âââ
VDD = 50V
âââ 23 âââ ns ID = 9.2A
âââ 30 âââ
RG = 18â¦
âââ 24 âââ
VGS = 10V, See Fig. 10 ÂÂ
Between lead,
D
âââ 4.5 âââ
6mm (0.25in.)
nH
from package
G
âââ 7.5 âââ
and center of die contact
S
âââ 560 âââ
VGS = 0V
âââ 81 âââ
VDS = 25V
âââ 10 âââ pF Æ = 1.0MHz, See Fig. 5 Â
âââ 150Â
44Â mJ IAS = 9.2A, L = 1.0mH
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)Â
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
 Starting TJ = 25°C, L = 1.0mH
RG = 25â¦, IAS = 9.2A, VGS=10V (See Figure 12)
 ISD ⤠9.2A, di/dt ⤠360A/µs, VDD ⤠V(BR)DSS,
TJ ⤠175°C
 Pulse width ⤠400µs; duty cycle ⤠2%.
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
âââ âââ 9.6
A showing the
integral reverse
G
âââ âââ 37
p-n junction diode.
S
âââ âââ 1.2 V TJ = 25°C, IS = 9.2A, VGS = 0V Â
âââ 83 120 ns TJ = 25°C, IF = 9.2A
âââ 220 330 nC di/dt = 100A/µs ÂÂ
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Â
This is a typical value at device destruction and represents
operation outside rated limits.
 This is a calculated value limited to TJ = 175°C .
 Uses IRF520V data and test conditions.
**When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to
application note #AN-994
2
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