IRF520VPBF Datasheet, PDF (2/8 Pages) International Rectifier – HEXFET® Power MOSFET

IRF520VPbF
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
V_(BR)DSS
∆V(BR)DSS/∆TJ
R_DS(on)
V_GS(th)
g_fs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
I_DSS
Drain-to-Source Leakage Current
I_GSS
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
L_D
Internal Drain Inductance
L_S
Internal Source Inductance
C_iss
C_oss
C_rss
E_AS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
Min. Typ. Max. Units
Conditions
100 ––– ––– V V_GS = 0V, I_D = 250µA
––– 0.12 ––– V/°C Reference to 25°C, I_D = 1mA
––– ––– 0.165 Ω V_GS = 10V, I_D = 5.5A
2.0 ––– 4.0 V V_DS = V_GS, I_D = 250µA
1.9 ––– ––– S V_DS = 50V, I_D = 5.5A
––– ––– 25 _µA V_DS = 100V, V_GS = 0V
––– ––– 250
V_DS = 80V, V_GS = 0V, T_J = 150°C
––– ––– 100 _nA V_GS = 20V
––– ––– -100
V_GS = -20V
––– ––– 22
––– ––– 5.2
I_D = 9.2A
nC V_DS = 80V
––– ––– 7.0
V_GS = 10V, See Fig. 6 and 13
––– 6.9 –––
V_DD = 50V
––– 23 ––– _ns I_D = 9.2A
––– 30 –––
R_G = 18Ω
––– 24 –––
V_GS = 10V, See Fig. 10
Between lead,
D
––– 4.5 –––
6mm (0.25in.)
nH _{from package}
G
––– 7.5 –––
and center of die contact
S
––– 560 –––
V_GS = 0V
––– 81 –––
V_DS = 25V
––– 10 ––– pF ƒ = 1.0MHz, See Fig. 5
––– 150 44 mJ I_AS = 9.2A, L = 1.0mH
Source-Drain Ratings and Characteristics
Parameter
I_S
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
t_on
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– 9.6
A ^{showing the}
integral reverse
G
––– ––– 37
p-n junction diode.
S
––– ––– 1.2 V T_J = 25°C, I_S = 9.2A, V_GS = 0V
––– 83 120 ns T_J = 25°C, I_F = 9.2A
––– 220 330 nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L_S+L_D)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting T_J = 25°C, L = 1.0mH
R_G = 25Ω, I_AS = 9.2A, V_GS=10V (See Figure 12)
I_SD ≤ 9.2A, di/dt ≤ 360A/µs, V_DD ≤ V_(BR)DSS,
T_J ≤ 175°C
Pulse width ≤ 400µs; duty cycle ≤ 2%.
This is a typical value at device destruction and represents
operation outside rated limits.
This is a calculated value limited to T_J = 175°C .
2
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