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| IRF3717PBF-1_15 Datasheet, PDF (2/10 Pages) International Rectifier – Synchronous MOSFET for Notebook Processor Power | |||
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IRF3717PbF-1
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
ÎÎVDSS/ÎTJ
RDS(on)
VGS(th)
ÎVGS(th)/ÎTJ
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
20
âââ
âââ
âââ
1.55
âââ
âââ
0.014
3.7
4.8
2.0
-5.4
âââ
âââ
4.4
5.7
2.45
âââ
V VGS = 0V, ID = 250μA
V/°C
mΩ
Reference to 25°C, ID = 1mA
e VGS = 10V, ID = 20A
e VGS = 4.5V, ID = 16A
V VDS = VGS, ID = 250μA
mV/°C
IDSS
Drain-to-Source Leakage Current
âââ âââ 1.0 μA VDS = 16V, VGS = 0V
âââ âââ 150
VDS = 16V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
âââ âââ 100 nA VGS = 20V
Gate-to-Source Reverse Leakage
âââ âââ -100
VGS = -20V
gfs
Forward Transconductance
Qg
Total Gate Charge
57 âââ âââ
âââ 22 33
S VDS = 10V, ID = 16A
Qgs1
Qgs2
Qgd
Qgodr
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
âââ 6.8 âââ
âââ 2.2 âââ
âââ 7.3 âââ
âââ 5.7 âââ
VDS = 10V
nC VGS = 4.5V
ID = 16A
See Fig. 16
Qsw
Switch Charge (Qgs2 + Qgd)
âââ 9.5 âââ
Qoss
td(on)
tr
td(off)
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
âââ 12 âââ nC VDS = 10V, VGS = 0V
âââ 12 âââ
VDD = 10V, VGS = 4.5V
âââ 14 âââ
ID = 16A
âââ 15 âââ ns Clamped Inductive Load
tf
Fall Time
âââ 6.0 âââ
Ciss
Input Capacitance
âââ 2890 âââ
VGS = 0V
Coss
Output Capacitance
âââ 930 âââ pF VDS = 10V
Crss
Reverse Transfer Capacitance
âââ 430 âââ
Æ = 1.0MHz
Avalanche Characteristics
EAS
IAR
d Parameter
Single Pulse Avalanche Energy
 Avalanche Current
Typ.
âââ
âââ
Max.
32
16
Units
mJ
A
Diode Characteristics
Parameter
IS
Continuous Source Current
Min. Typ. Max. Units
Conditions
âââ âââ 20
MOSFET symbol
D
(Body Diode)
ISM
Pulsed Source Current
ÃÂ (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
âââ âââ 160
âââ âââ 1.0
âââ 22 32
âââ 13 19
A showing the
integral reverse
G
e p-n junction diode.
S
V TJ = 25°C, IS = 16A, VGS = 0V
e ns TJ = 25°C, IF = 16A, VDD = 10V
nC di/dt = 100A/μs
2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
July 25, 2014
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