IRF3709ZSTRLPBF Datasheet, PDF (2/13 Pages) International Rectifier – High Frequency Synchronous Buck Converters for Computer Processor Power

IRF3709Z/S/LPbF
Static @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BV_DSS
∆ΒV_DSS/∆T_J
R_DS(on)
V_GS(th)
∆V_GS(th)/∆T_J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
30 ––– ––– V V_GS = 0V, I_D = 250µA
––– 0.021 ––– mV/°C Reference to 25°C, I_D = 1mA
e ––– 5.0 6.3 ^mΩ V_GS = 10V, I_D = 21A
––– 6.2 7.8
e V_GS = 4.5V, I_D = 17A
1.35 ––– 2.25 V V_DS = V_GS, I_D = 250µA
––– -5.5 ––– mV/°C
I_DSS
Drain-to-Source Leakage Current
––– ––– 1.0 µA V_DS = 24V, V_GS = 0V
––– ––– 150
V_DS = 24V, V_GS = 0V, T_J = 125°C
I_GSS
Gate-to-Source Forward Leakage
––– ––– 100 nA V_GS = 20V
Gate-to-Source Reverse Leakage
––– ––– -100
V_GS = -20V
gfs
Q_g
Q_gs1
Q_gs2
Q_gd
Q_godr
Q_sw
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q_gs2 + Q_gd)
88 ––– –––
––– 17 26
––– 4.4 –––
––– 1.7 –––
––– 6.0 –––
––– 4.9 –––
––– 7.7 –––
S V_DS = 15V, I_D = 17A
V_DS = 15V
nC V_GS = 4.5V
I_D = 17A
See Fig. 14a&b
Q_oss
t_d(on)
t_r
t_d(off)
t_f
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
––– 11 ––– nC V_DS = 16V, V_GS = 0V
––– 13 –––
e V_DD = 15V, V_GS = 4.5V
––– 41 –––
I_D = 17A
––– 16 ––– ns Clamped Inductive Load
––– 4.7 –––
C_iss
Input Capacitance
––– 2130 –––
V_GS = 0V
C_oss
Output Capacitance
––– 450 ––– pF V_DS = 15V
C_rss
Reverse Transfer Capacitance
––– 220 –––
ƒ = 1.0MHz
Avalanche Characteristics
E_AS
I_AR
E_AR
d ^Parameter
Single Pulse Avalanche Energy
Ù Avalanche Current
™ Repetitive Avalanche Energy
Typ.
–––
–––
–––
Max.
60
17
7.9
Units
mJ
A
mJ
Diode Characteristics
Parameter
I_S
Continuous Source Current
h ^{Min. Typ. Max. Units}
Conditions
––– ––– ⁸⁷
MOSFET symbol
D
(Body Diode)
I_SM
Pulsed Source Current
Ù (Body Diode)
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
A showing the
––– ––– 350
integral reverse
G
––– ––– 1.0
p-n junction diode.
S
e V T_J = 25°C, I_S = 17A, V_GS = 0V
––– 16
––– 6.2
24
9.3
e ^{ns TJ = 25°C, IF = 17A, VDD = 15V}
nC di/dt = 100A/µs
2
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