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IRF3315PBF Datasheet, PDF (2/8 Pages) International Rectifier – HEXFET Power MOSFET | |||
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IRF3315PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD
Internal Drain Inductance
LS
Internal Source Inductance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Min. Typ. Max.
150 âââ âââ
âââ 0.187 âââ
âââ âââ 0.082
2.0 âââ 4.0
17 âââ âââ
âââ âââ 25
âââ âââ 250
âââ âââ 100
âââ âââ -100
âââ âââ 95
âââ âââ 11
âââ âââ 47
âââ 9.6 âââ
âââ 32 âââ
âââ 49 âââ
âââ 38 âââ
âââ 4.5 âââ
âââ 7.5 âââ
âââ 1300 âââ
âââ 300 âââ
âââ 160 âââ
Units
V
V/°C
â¦
V
S
µA
nA
nC
ns
nH
pF
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 12A
VDS = VGS, ID = 250µA
VDS = 50V, ID = 12A
VDS = 150V, VGS = 0V
VDS = 120V, VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
ID = 12A
VDS = 120V
VGS = 10V, See Fig. 6 and 13
VDD = 75V
ID = 12A
RG = 5.1â¦
RD = 5.9â¦, See Fig. 10
Between lead,
D
6mm (0.25in.)
from package
G
and center of die contact
S
VGS = 0V
VDS = 25V
Æ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
âââ âââ 21
A showing the
integral reverse
G
âââ âââ 84
p-n junction diode.
S
âââ âââ 1.3 V TJ = 25°C, IS = 12A, VGS = 0V
âââ 174 260 ns TJ = 25°C, IF = 12A
âââ 1.2 1.7 µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L = 4.9mH
RG = 25â¦, IAS = 12A. (See Figure 12)
ISD ⤠12A, di/dt ⤠140A/µs, VDD ⤠V(BR)DSS,
TJ ⤠175°C
Pulse width ⤠300µs; duty cycle ⤠2%.
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