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IRF2805SPBF Datasheet, PDF (2/11 Pages) International Rectifier – HEXFET Power MOSFET | |||
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IRF2805S/LPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
55 âââ âââ V VGS = 0V, ID = 250µA
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient âââ 0.06 âââ V/°C Reference to 25°C, ID = 1mA
RDS(on)
Static Drain-to-Source On-Resistance âââ 3.9 4.7 m⦠VGS = 10V, ID = 104A Â
VGS(th)
Gate Threshold Voltage
2.0 âââ 4.0 V VDS = 10V, ID = 250µA
gfs
Forward Transconductance
91 âââ âââ S VDS = 25V, ID = 104A
IDSS
Drain-to-Source Leakage Current
âââ âââ 20
âââ âââ 250
µA VDS = 55V, VGS = 0V
VDS = 44V, VGS = 0V, TJ = 150°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
âââ âââ 200 nA VGS = 20V
âââ âââ -200
VGS = -20V
Qg
Total Gate Charge
âââ 150 230
ID = 104A
Qgs
Gate-to-Source Charge
âââ 38 57 nC VDS = 44V
Qgd
Gate-to-Drain ("Miller") Charge
âââ 52 78
VGS = 10VÂ
td(on)
Turn-On Delay Time
âââ 14 âââ
VDD = 28V
tr
td(off)
Rise Time
Turn-Off Delay Time
âââ 120 âââ ns ID = 104A
âââ 68 âââ
RG = 2.5â¦
tf
Fall Time
âââ 110 âââ
VGS = 10V Â
LD
Internal Drain Inductance
LS
Internal Source Inductance
Between lead,
D
âââ 4.5 âââ
6mm (0.25in.)
nH
from package
G
âââ 7.5 âââ
and center of die contact
S
Ciss
Input Capacitance
âââ 5110 âââ
VGS = 0V
Coss
Output Capacitance
âââ 1190 âââ pF VDS = 25V
Crss
Reverse Transfer Capacitance
âââ 210 âââ
Æ = 1.0MHz, See Fig. 5
Coss
Output Capacitance
âââ 6470 âââ
VGS = 0V, VDS = 1.0V, Æ = 1.0MHz
Coss
Output Capacitance
âââ 860 âââ
VGS = 0V, VDS = 44V, Æ = 1.0MHz
Coss eff. Effective Output Capacitance Â
âââ 1600 âââ
VGS = 0V, VDS = 0V to 44V
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) Â
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
 Starting TJ = 25°C, L = 0.08mH
RG = 25â¦, IAS = 104A. (See Figure 12).
 ISD ⤠104A, di/dt ⤠240A/µs, VDD ⤠V(BR)DSS,
TJ ⤠175°C
 Pulse width ⤠400µs; duty cycle ⤠2%.
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
âââ âââ 175Â
A
showing the
integral reverse
G
âââ âââ 700
p-n junction diode.
S
âââ âââ 1.3
âââ 80 120
âââ 290 430
V TJ = 25°C, IS = 104A, VGS = 0V Â
ns TJ = 25°C, IF = 104A
nC di/dt = 100A/µs Â
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Â
Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS .
 Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
 Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
 This value determined from sample failure population. 100%
tested to this value in production.
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