IRF1902TRPBF Datasheet, PDF (2/9 Pages) International Rectifier – Ultra Low On-Resistance

IRF1902PbF
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
V_(BR)DSS Drain-to-Source Breakdown Voltage
∆V_(BR)DSS/∆T_J Breakdown Voltage Temp. Coefficient
R_DS(on)
Static Drain-to-Source On-Resistance
V_GS(th)
g_fs
Gate Threshold Voltage
Forward Transconductance
I_DSS
Drain-to-Source Leakage Current
I_GSS
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
C_iss
C_oss
C_rss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
20 ––– –––
––– 0.019 –––
––– ––– 85
––– ––– 170
V
V/°C
mΩ
V_GS = 0V, I_D = 250µA
Reference to 25°C, I_D = 1mA
V_GS = 4.5V, I_D = 4.0A ‚
V_GS = 2.7V, I_D = 3.2A ‚
0.70 ––– ––– V V_DS = V_GS, I_D = 250µA
5.6 ––– ––– S V_DS = 10V, I_D = 4.0A
––– ––– 1.0
––– ––– 25
µA
V_DS = 16V, V_GS = 0V
V_DS = 16V, V_GS = 0V, T_J = 70°C
––– ––– 100 _nA V_GS = 12V
––– ––– -100
V_GS = -12V
––– 5.0 7.5
I_D = 4.2A
––– 1.2 ––– nC V_DS = 10V
––– 1.8 –––
––– 5.9 –––
V_GS = 4.5V
V_DD = 10V ‚
––– 13 ––– _ns I_D = 1.0A
––– 23 –––
R_G = 53Ω
––– 19 –––
V_GS = 4.5V
––– 310 –––
––– 130 –––
V_GS = 0V
pF V_DS = 15V
––– 55 –––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
I_S
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) 
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
Min. Typ. Max. Units
Conditions
––– ––– 4.2
––– ––– 17
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
D
G
S
––– ––– 1.2 V T_J = 25°C, I_S = 2.5A, V_GS = 0V ‚
––– 38 57 ns T_J = 25°C, I_F = 2.5A
––– 42 63 nC di/dt = 100A/µs ‚
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Pulse width ≤ 400µs; duty cycle ≤ 2%.
ƒ Surface mounted on 1 in square Cu board
2
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