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IRF1324S-7PPBF Datasheet, PDF (2/9 Pages) International Rectifier – HEXFET Power MOSFET | |||
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IRF1324S-7PPbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
âV(BR)DSS/âTJ
RDS(on)
VGS(th)
IDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
RG
Internal Gate Resistance
24 âââ âââ V VGS = 0V, ID = 250µA
âââ 0.023 âââ V/°C Reference to 25°C, ID = 5mAd
âââ 0.80 1.0 m⦠VGS = 10V, ID = 160A g
2.0 âââ 4.0 V VDS = VGS, ID = 250µA
âââ âââ 20 µA VDS = 24V, VGS = 0V
âââ âââ 250
VDS = 19V, VGS = 0V, TJ = 125°C
âââ âââ 200 nA VGS = 20V
âââ âââ -200
VGS = -20V
âââ 3.0 âââ â¦
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
270 âââ âââ
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain ("Miller") Charge
âââ 180 252
âââ 47 âââ
âââ 58 âââ
Qsync
td(on)
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
âââ 122 âââ
âââ 19 âââ
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
âââ 240 âââ
âââ 86 âââ
âââ 93 âââ
Ciss
Input Capacitance
Coss
Output Capacitance
âââ 7700 âââ
âââ 3380 âââ
Crss
Reverse Transfer Capacitance
âââ 1930 âââ
Coss eff. (ER) Effective Output Capacitance (Energy Related) âââ 4780 âââ
Coss eff. (TR) Effective Output Capacitance (Time Related)h âââ 4970 âââ
S VDS = 50V, ID = 160A
nC ID = 75A
VDS =12V
VGS = 10V g
ID = 75A, VDS =0V, VGS = 10V g
ns VDD = 16V
ID = 160A
RG =2.7â¦
VGS = 10V g
pF VGS = 0V
VDS = 19V
Æ = 1.0MHz, See Fig.5
VGS = 0V, VDS = 0V to 19V i, See Fig.11
VGS = 0V, VDS = 0V to 19V h
Diode Characteristics
Symbol
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) d
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Reverse Recovery Current
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
âââ âââ 429c A MOSFET symbol
D
showing the
âââ âââ 1636 A integral reverse
G
p-n junction diode.
S
âââ âââ 1.3 V TJ = 25°C, IS = 160A, VGS = 0V g
âââ 71 107 ns TJ = 25°C
VR = 20V,
âââ 74 110
TJ = 125°C
âââ 83 120 nC TJ = 25°C
IF = 160A
di/dt = 100A/µs g
âââ 92 140
TJ = 125°C
âââ 2.0 âââ A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Calculated continuous current based on maximum allowable junction  Coss eff. (TR) is a fixed capacitance that gives the same charging time
temperature. Package limitation current is 160A.
 Repetitive rating; pulse width limited by max. junction
temperature.
 Limited by TJmax, starting TJ = 25°C, L = 0.018mH
as Coss while VDS is rising from 0 to 80% VDSS.
 Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
 When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
RG = 25â¦, IAS = 160A, VGS =10V. Part not recommended for use
above this value.
mended footprint and soldering techniques refer to application note #AN-994.
 Rθ is measured at TJ approximately 90°C
 ISD ⤠160A, di/dt ⤠600A/µs, VDD ⤠V(BR)DSS, TJ ⤠175°C.
Â
Pulse width ⤠400µs; duty cycle ⤠2%.
2
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