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IRF1010EZPBF Datasheet, PDF (2/12 Pages) International Rectifier – AUTOMOTIVE MOSFET
IRF1010EZ/S/LPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
∆ΒVDSS/∆TJ
RDS(on)
VGS(th)
Drain-to-Source Breakdown Voltage 60 ––– –––
Breakdown Voltage Temp. Coefficient ––– 0.058 –––
Static Drain-to-Source On-Resistance ––– 6.8 8.5
Gate Threshold Voltage
2.0 ––– 4.0
V
V/°C
mΩ
V
VGS = 0V, ID = 250µA
f Reference to 25°C, ID = 1mA
VGS = 10V, ID = 51A
VDS = VGS, ID = 250µA
gfs
Forward Transconductance
200 ––– ––– S VDS = 25V, ID = 51A
IDSS
Drain-to-Source Leakage Current
––– ––– 20 µA VDS = 60V, VGS = 0V
––– ––– 250
VDS = 60V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 200 nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -200
VGS = -20V
Qg
Total Gate Charge
––– 58 86 nC ID = 51A
Qgs
Qgd
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
––– 19 28
––– 21 32
f VDS = 48V
VGS = 10V
td(on)
Turn-On Delay Time
––– 19 ––– ns VDD = 30V
tr
Rise Time
––– 90 –––
ID = 51A
td(off)
tf
Turn-Off Delay Time
Fall Time
––– 38 –––
––– 54 –––
f RG = 7.95Ω
VGS = 10V
LD
Internal Drain Inductance
––– 4.5 ––– nH Between lead,
D
6mm (0.25in.)
LS
Internal Source Inductance
––– 7.5 –––
from package
G
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
––– 2810 –––
––– 420 –––
––– 200 –––
––– 1440 –––
––– 320 –––
––– 510 –––
and center of die contact
S
pF VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 48V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 48V
Diode Characteristics
Parameter
IS
Continuous Source Current
Min. Typ. Max. Units
Conditions
––– ––– 84
MOSFET symbol
D
(Body Diode)
A showing the
ISM
Pulsed Source Current
Ù (Body Diode)
VSD
Diode Forward Voltage
––– ––– 340
––– ––– 1.3
integral reverse
G
f p-n junction diode.
S
V TJ = 25°C, IS = 51A, VGS = 0V
trr
Qrr
Reverse Recovery Time
Reverse Recovery Charge
––– 41
––– 54
62
81
f ns TJ = 25°C, IF = 51A, VDD = 30V
nC di/dt = 100A/µs
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
… Coss eff. is a fixed capacitance that gives the same charging time
max. junction temperature. (See fig. 11).
as Coss while VDS is rising from 0 to 80% VDSS .
‚ Limited by TJmax, starting TJ = 25°C, L = 0.077mH, † Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
RG = 25Ω, IAS = 51A, VGS =10V. Part not
avalanche performance.
recommended for use above this value.
ƒ ISD ≤ 51A, di/dt ≤ 260A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C.
„ Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
‡ This value determined from sample failure population. 100%
tested to this value in production.
ˆ This is applied to D2Pak, when mounted on 1" square PCB
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
2
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