|
IRF1010EZPBF Datasheet, PDF (2/12 Pages) International Rectifier – AUTOMOTIVE MOSFET | |||
|
◁ |
IRF1010EZ/S/LPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
âÎVDSS/âTJ
RDS(on)
VGS(th)
Drain-to-Source Breakdown Voltage 60 âââ âââ
Breakdown Voltage Temp. Coefficient âââ 0.058 âââ
Static Drain-to-Source On-Resistance âââ 6.8 8.5
Gate Threshold Voltage
2.0 âââ 4.0
V
V/°C
mâ¦
V
VGS = 0V, ID = 250µA
f Reference to 25°C, ID = 1mA
VGS = 10V, ID = 51A
VDS = VGS, ID = 250µA
gfs
Forward Transconductance
200 âââ âââ S VDS = 25V, ID = 51A
IDSS
Drain-to-Source Leakage Current
âââ âââ 20 µA VDS = 60V, VGS = 0V
âââ âââ 250
VDS = 60V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
âââ âââ 200 nA VGS = 20V
Gate-to-Source Reverse Leakage
âââ âââ -200
VGS = -20V
Qg
Total Gate Charge
âââ 58 86 nC ID = 51A
Qgs
Qgd
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
âââ 19 28
âââ 21 32
f VDS = 48V
VGS = 10V
td(on)
Turn-On Delay Time
âââ 19 âââ ns VDD = 30V
tr
Rise Time
âââ 90 âââ
ID = 51A
td(off)
tf
Turn-Off Delay Time
Fall Time
âââ 38 âââ
âââ 54 âââ
f RG = 7.95â¦
VGS = 10V
LD
Internal Drain Inductance
âââ 4.5 âââ nH Between lead,
D
6mm (0.25in.)
LS
Internal Source Inductance
âââ 7.5 âââ
from package
G
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
âââ 2810 âââ
âââ 420 âââ
âââ 200 âââ
âââ 1440 âââ
âââ 320 âââ
âââ 510 âââ
and center of die contact
S
pF VGS = 0V
VDS = 25V
Æ = 1.0MHz, See Fig. 5
VGS = 0V, VDS = 1.0V, Æ = 1.0MHz
VGS = 0V, VDS = 48V, Æ = 1.0MHz
VGS = 0V, VDS = 0V to 48V
Diode Characteristics
Parameter
IS
Continuous Source Current
Min. Typ. Max. Units
Conditions
âââ âââ 84
MOSFET symbol
D
(Body Diode)
A showing the
ISM
Pulsed Source Current
ÃÂ (Body Diode)
VSD
Diode Forward Voltage
âââ âââ 340
âââ âââ 1.3
integral reverse
G
f p-n junction diode.
S
V TJ = 25°C, IS = 51A, VGS = 0V
trr
Qrr
Reverse Recovery Time
Reverse Recovery Charge
âââ 41
âââ 54
62
81
f ns TJ = 25°C, IF = 51A, VDD = 30V
nC di/dt = 100A/µs
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
Â
Coss eff. is a fixed capacitance that gives the same charging time
max. junction temperature. (See fig. 11).
as Coss while VDS is rising from 0 to 80% VDSS .
 Limited by TJmax, starting TJ = 25°C, L = 0.077mH,  Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
RG = 25â¦, IAS = 51A, VGS =10V. Part not
avalanche performance.
recommended for use above this value.
 ISD ⤠51A, di/dt ⤠260A/µs, VDD ⤠V(BR)DSS,
TJ ⤠175°C.
 Pulse width ⤠1.0ms; duty cycle ⤠2%.
 This value determined from sample failure population. 100%
tested to this value in production.
 This is applied to D2Pak, when mounted on 1" square PCB
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
2
www.irf.com
|
▷ |